FCP380N60E Fairchild Semiconductor, FCP380N60E Datasheet - Page 5

• Manufacturer Part Number: FCP380N60E
• Description: MOSFET 600V N-CHAN MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FCP380N60E

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 600 V
• Continuous Drain Current: 10.2 A
• Resistance Drain-source Rds (on): 380 mOhms
• Mounting Style: Through Hole
• Package / Case: TO-220
• Power Dissipation: 106 W
• Factory Pack Quantity: 400

©2012 Fairchild Semiconductor Corporation
FCP380N60E / FCPF380N60E Rev. C7
Typical Performance Characteristics
Figure 14. Transient Thermal Response Curve - FCPF380N60E
Figure 13. Transient Thermal Response Curve - FCP380N60E
0.05
0.05
0.1
0.1
2
1
5
1
10
10
-5
-5
0.05
0.02
0.01
Single pulse
Single pulse
0.5
0.1
0.05
0.02
0.01
0.2
0.1
0.5
0.2
10
-4
10
-4
10
Rectangular Pulse Duration [sec]
Rectangular Pulse Duration [sec]
-3
(Continued)
10
10
-3
-2
5
10
10
-1
-2
*Notes:
*Notes:
P
1. Z
2. Duty Factor, D= t
3. T
1. Z
2. Duty Factor, D= t
3. T
P
DM
DM
1
θ
JM
θ
JM
JC
JC
(t) = 1.18
- T
- T
(t) = 4
10
C
C
t
1
t
= P
1
-1
= P
t
2
t
o
2
C/W Max.
DM
10
DM
o
C/W Max.
* Z
* Z
1
1
θ
/t
θ
/t
JC
JC
2
2
(t)
(t)
100
1
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