FCP380N60E Fairchild Semiconductor, FCP380N60E Datasheet - Page 3

• Manufacturer Part Number: FCP380N60E
• Description: MOSFET 600V N-CHAN MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FCP380N60E

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 600 V
• Continuous Drain Current: 10.2 A
• Resistance Drain-source Rds (on): 380 mOhms
• Mounting Style: Through Hole
• Package / Case: TO-220
• Power Dissipation: 106 W
• Factory Pack Quantity: 400

©2012 Fairchild Semiconductor Corporation
FCP380N60E / FCPF380N60E Rev. C7
Typical Performance Characteristics
10000
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
1000
Figure 1. On-Region Characteristics
100
100
0.1
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.5
10
10
1
1
0.1
0.1
0
V
C iss = C gs + C gd (C ds = shorted)
C oss = C ds + C gd
C rss = C gd
*Note:
GS
1. V
2. f = 1MHz
= 15.0V
Drain Current and Gate Voltage
GS
V
10.0V
V
5
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
DS
DS
= 0V
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
1
I
D
, Drain Current [A]
10
1
V
GS
15
10
= 10V
*Notes:
1. 250
2. T
V
*Note: T
GS
20
C
= 25
μ
= 20V
s Pulse Test
100
o
C
C
25
= 25
10
C
C
C
oss
rss
iss
o
C
600
20
30
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
100
0.1
10
100
10
1
10
1
8
6
4
2
0
2
0.2
0
Variation vs. Source Current
and Temperature
V
0.4
150
SD
5
V
, Body Diode Forward Voltage [V]
o
GS
C
4
Q
, Gate-Source Voltage[V]
0.6
g
10
, Total Gate Charge [nC]
150
-55
25
o
o
C
C
0.8
o
15
C
V
V
V
6
DS
DS
DS
*Notes:
= 120V
= 300V
= 480V
25
1.0
1. V
2. 250
20
o
C
*Notes:
1. V
2. 250
DS
μ
GS
= 20V
1.2
s Pulse Test
*Note: I
25
μ
8
= 0V
s Pulse Test
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1.4
30
D
= 5A
10
1.6
35