FCP380N60E Fairchild Semiconductor, FCP380N60E Datasheet

no-image

FCP380N60E

Manufacturer Part Number
FCP380N60E
Description
MOSFET 600V N-CHAN MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FCP380N60E

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
600 V
Continuous Drain Current
10.2 A
Resistance Drain-source Rds (on)
380 mOhms
Mounting Style
Through Hole
Package / Case
TO-220
Power Dissipation
106 W
Factory Pack Quantity
400

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FCP380N60E
Manufacturer:
FAIRCHILD
Quantity:
8 000
Part Number:
FCP380N60E
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2012 Fairchild Semiconductor Corporation
FCP380N60E / FCPF380N60E Rev. C7
MOSFET Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
FCP380N60E / FCPF380N60E
N-Channel SuperFET
600 V, 10.2 A, 380 mΩ
Features
• 650 V @T
• Max. R
• Ultra Low Gate Charge ( Typ. Q
• Low Effective Output Capacitance ( Typ. C
• 100% Avalanche Tested
Applications
• LCD / LED / PDP TV Lighting
• Solar Inverter
• AC-DC Power Supply
D
DM
AR
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
G D S
J
= 150°C
= 380 mΩ
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TO-220
g
= 34 nC)
®
T
oss
II MOSFET
C
= 25
.eff = 97 pF)
Parameter
Parameter
- DC
- AC
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
o
C unless otherwise noted
C
G
= 25
D
o
S
C)
C
C
1
= 25
= 100
o
Description
SuperFET
eration of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-resis-
tance and lower gate charge performance.This advanced tech-
nology is tailored to minimize conduction loss, provide superior
switching performance, and withstand extreme dv/dt rate and
higher avalanche energy. Consequently, SuperFETII MOSFET is
suitable for various AC/DC power conversion for system minia-
turization and higher efficiency.
C
o
C)
o
TO-220F
C)
®
II MOSFET is Fairchild Semiconductor
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FCP380N60E FCPF380N60E
FCP380N60E FCPF380N60E
G
10.2
30.6
0.85
1.18
62.5
106
0.5
6.4
-55 to +150
211.6
1.06
600
±20
±30
100
300
2.3
D
S
20
March 2013
10.2*
30.6*
62.5
0.25
6.4*
0.5
31
www.fairchildsemi.com
4
®
’s first gen-
W/
o
Unit
V/ns
Unit
C/W
mJ
mJ
o
o
W
V
V
V
A
A
A
C
C
o
C

Related parts for FCP380N60E

FCP380N60E Summary of contents

Page 1

... R Thermal Resistance, Case to Heat Sink (Typical) θCS R Thermal Resistance, Junction to Ambient θJA ©2012 Fairchild Semiconductor Corporation FCP380N60E / FCPF380N60E Rev. C7 ® II MOSFET Description SuperFET eration of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resis nC) tance and lower gate charge performance.This advanced tech- nology is tailored to minimize conduction loss, provide superior ...

Page 2

... ≤ 5.1 A, di/dt ≤ 200 A/μs, V ≤ Starting DSS 4. Essentially Independent of Operating Temperature Typical Characteristics ©2012 Fairchild Semiconductor Corporation FCP380N60E / FCPF380N60E Rev. C7 Package Reel Size TO-220 - TO-220F - unless otherwise noted C Test Conditions mA, T ...

Page 3

... C iss = shorted) C oss = rss = C gd 0.5 0 Drain-Source Voltage [V] DS ©2012 Fairchild Semiconductor Corporation FCP380N60E / FCPF380N60E Rev. C7 Figure 2. Transfer Characteristics *Notes: μ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 11. Maximum Drain Current Case Temperature [ C ©2012 Fairchild Semiconductor Corporation FCP380N60E / FCPF380N60E Rev. C7 (Continued) Figure 8. On-Resistance Variation *Notes 10mA D 80 120 160 o C] Figure 10. Maximum Safe Operating Area μ μ ...

Page 5

... Typical Performance Characteristics Figure 13. Transient Thermal Response Curve - FCP380N60E 2 1 0.5 0.2 0.1 0.05 0.02 0.1 0.01 Single pulse 0. Figure 14. Transient Thermal Response Curve - FCPF380N60E 5 0.5 1 0.2 0.1 0.05 0.02 0.01 Single pulse 0.1 0. ©2012 Fairchild Semiconductor Corporation FCP380N60E / FCPF380N60E Rev. C7 (Continued) *Notes Rectangular Pulse Duration [sec] P *Notes ...

Page 6

... Unclamped Inductive Switching Test Circuit & Waveforms ©2012 Fairchild Semiconductor Corporation FCP380N60E / FCPF380N60E Rev. C7 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2012 Fairchild Semiconductor Corporation FCP380N60E / FCPF380N60E Rev. C7 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type ...

Page 8

... Mechanical Dimensions ©2012 Fairchild Semiconductor Corporation FCP380N60E / FCPF380N60E Rev. C7 TO-220AB 8 www.fairchildsemi.com ...

Page 9

... Package Dimensions * Front/Back Side Isolation Voltage : AC 2500V ©2012 Fairchild Semiconductor Corporation FCP380N60E / FCPF380N60E Rev. C7 TO-220F (Retractable) 9 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2012 Fairchild Semiconductor Corporation FCP380N60E / FCPF380N60E Rev. C7 ® tm ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...

Related keywords