FCP380N60E Fairchild Semiconductor, FCP380N60E Datasheet - Page 4

• Manufacturer Part Number: FCP380N60E
• Description: MOSFET 600V N-CHAN MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FCP380N60E

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 600 V
• Continuous Drain Current: 10.2 A
• Resistance Drain-source Rds (on): 380 mOhms
• Mounting Style: Through Hole
• Package / Case: TO-220
• Power Dissipation: 106 W
• Factory Pack Quantity: 400

©2012 Fairchild Semiconductor Corporation
FCP380N60E / FCPF380N60E Rev. C7
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
Figure 11. Maximum Drain Current
1.16
1.12
1.08
1.04
1.00
0.96
0.92
0.88
100
0.1
10
12
10
-80
1
8
6
4
2
0
0.1
25
vs. Case Temperature - FCP380N60E
vs. Temperature
-40
T
J
50
V
T
, Junction Temperature [
*Notes:
Operation in This Area
is Limited by R
DS
C
1
, Case Temperature [
1. T
2. T
3. Single Pulse
, Drain-Source Voltage [V]
0
C
J
= 150
= 25
75
o
40
o
C
C
10
DS(on)
100
DC
10ms
80
1ms
*Notes:
100
1. V
2. I
10
o
100
μ
C]
D
o
s
μ
GS
C]
s
= 10mA
125
120
= 0V
160
1000
150
(Continued)
4
Figure 12. Eoss vs. Drain to Source Voltage
Figure 8. On-Resistance Variation
Figure 10. Maximum Safe Operating Area
0.01
100
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.1
10
6
5
4
3
2
1
0
1
-80
0.1
vs. Case Temperature - FCPF380N60E
0
Switching Capability
vs. Temperature
-40
100
*Notes:
V
Operation in This Area
is Limited by R
T
1. T
2. T
3. Single Pulse
DS
V
J
, Junction Temperature [
DS
, Drain to Source Voltage [V]
1
C
J
, Drain-Source Voltage [V]
= 150
= 25
200
0
o
o
C
C
DS(on)
300
40
10
400
80
*Notes:
100
1. V
2. I
o
10
100
1ms
DC
10ms
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C]
D
120
500
GS
μ
= 5A
s
μ
s
= 10V
1000
160
600