M58LT256JST8ZA6E NUMONYX, M58LT256JST8ZA6E Datasheet - Page 86

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M58LT256JST8ZA6E

Manufacturer Part Number
M58LT256JST8ZA6E
Description
IC FLASH 256MBIT 85NS 64TBGA
Manufacturer
NUMONYX
Datasheet

Specifications of M58LT256JST8ZA6E

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
256M (16Mx16)
Speed
85ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 2 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-TBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M58LT256JST8ZA6E
Manufacturer:
STM
Quantity:
624
Part Number:
M58LT256JST8ZA6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Common Flash interface
86/108
Table 43.
1. The variable P is a pointer which is defined at CFI offset 015h.
2. Bank regions. There are two bank regions, see Tables
3. Although the device supports Page Read mode, this is not described in the datasheet as its use is not
(P+30)h = 13Ah 02h
(P+31)h = 13Bh 03h
advantageous in a multiplexed device.
M58LT256JST
Offset
Bank and erase block region 1 information (continued)
Data
(P+30)h = 13Ah
(P+31)h = 13Bh
(P+32)h = 13Ch
(P+33)h = 13Dh
(P+34)h = 13Eh
(P+35)h = 13Fh
(P+36)h = 140h
(P+37)h = 141h
(P+38)h = 142h
(P+39)h = 143h
M58LT256JSB
Offset
Data
02h
03h
0Eh Bank region 1 Erase Block type 2 information
00h
02h
64h
00h
02h
03h
00h
Bank region 1 (Erase Block type 1): bits per cell,
internal ECC
Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
Bits 5-7: reserved
Bank region 1 (Erase Block type 1): page mode
and synchronous mode capabilities
Bit 0: page-mode reads permitted
Bit 1: synchronous reads permitted
Bit 2: synchronous writes permitted
Bits 3-7: reserved
Bits 0-15: n+1 = number of identical-sized
erase blocks
Bits 16-31: n × 256 = number of bytes in erase
block region
Bank region 1 (Erase Block type 2)
Minimum block erase cycles × 1000
Bank regions 1 (Erase Block Type 2): bits per cell,
internal ECC
Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
Bits 5-7: reserved
Bank region 1 (Erase Block Type 2): page mode
and synchronous mode capabilities
Bit 0: page-mode reads permitted
Bit 1: synchronous reads permitted
Bit 2: synchronous writes permitted
Bits 3-7: reserved
29
to 34.
M58LT256JST, M58LT256JSB
Description

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