M58LT256JST8ZA6E NUMONYX, M58LT256JST8ZA6E Datasheet - Page 83

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M58LT256JST8ZA6E

Manufacturer Part Number
M58LT256JST8ZA6E
Description
IC FLASH 256MBIT 85NS 64TBGA
Manufacturer
NUMONYX
Datasheet

Specifications of M58LT256JST8ZA6E

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
256M (16Mx16)
Speed
85ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 2 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-TBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M58LT256JST8ZA6E
Manufacturer:
STM
Quantity:
624
Part Number:
M58LT256JST8ZA6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
M58LT256JST, M58LT256JSB
Table 40.
(P+ 11)h = 11Bh
(P+12)h = 11Ch
(P+13)h = 11Dh
(P+1C)h = 126h
(P+10)h = 11Ah
(P+14)h = 11Eh
(P+15)h = 11Fh
(P+1A)h = 124h
(P+1B)h = 125h
(P+16)h = 120h
(P+17)h = 121h
(P+18)h = 122h
(P+19)h = 123h
(P+E)h = 118h
(P+F)h = 119h
Offset
Protection register information
0002h
0080h Protection Field 1: Protection Description
0000h
0003h
0003h
0089h
0000h
0000h
0000h
0000h
0000h
0000h
0010h
0000h
0004h
Data
Number of protection register fields in JEDEC ID space.
0000h indicates that 256 fields are available.
Bits 0-7 Lower byte of protection register address
Bits 8-15 Upper byte of protection register address
Bits 16-23 2
Bits 24-31 2
Protection Register 2: Protection Description
Bits 0-31 protection register address
Bits 32-39 n number of factory programmed regions (lower
byte)
Bits 40-47 n number of factory programmed regions (upper
byte)
Bits 48-55 2
Bits 56-63 n number of user programmable regions (lower
byte)
Bits 64-71 n number of user programmable regions (upper
byte)
Bits 72-79 2
n
n
n
n
bytes in factory pre-programmed region
bytes in user programmable region
bytes in factory programmable region
bytes in user programmable region
Description
Common Flash interface
8 Bytes
8 Bytes
Value
80h
00h
89h
00h
00h
00h
83/108
16
16
2
0
0
0
0

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