M58LT256JST8ZA6E NUMONYX, M58LT256JST8ZA6E Datasheet - Page 18

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M58LT256JST8ZA6E

Manufacturer Part Number
M58LT256JST8ZA6E
Description
IC FLASH 256MBIT 85NS 64TBGA
Manufacturer
NUMONYX
Datasheet

Specifications of M58LT256JST8ZA6E

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
256M (16Mx16)
Speed
85ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 2 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-TBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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STM
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Command interface
4
18/108
Command interface
All bus write operations to the memory are interpreted by the command interface.
Commands consist of one or more sequential bus write operations. An internal
Program/Erase Controller manages all timings and verifies the correct execution of the
program and erase commands. The Program/Erase Controller provides a Status Register
whose output may be read at any time to monitor the progress or the result of the operation.
The command interface is reset to read mode when power is first applied, when exiting from
reset or whenever V
Any invalid combination of commands are ignored.
Refer to
commands
Command Interface.
Table 4.
Hex code
BCh
CBh
B0h
C0h
D0h
E8h
FFh
01h
03h
10h
20h
40h
50h
60h
70h
80h
90h
98h
Table 4: Command
and
Command codes
Appendix D: Command interface state tables
Block Protect Confirm
Set Configuration Register Confirm
Alternative Program Setup
Block Erase Setup
Program Setup
Clear Status Register
Block Protect Setup, Block Unprotect Setup and Set Configuration Register
Setup
Read Status Register
Buffer Enhanced Factory Program Setup
Read Electronic Signature
Read CFI Query
Program/Erase Suspend
Blank Check Setup
Protection Register Program
Blank Check Confirm
Program/Erase Resume, Block Erase Confirm, Block Unprotect Confirm, Buffer
Program or Buffer Enhanced Factory Program Confirm
Buffer Program
Read Array
DD
is lower than V
codes,
Table 5: Standard
LKO
. Command sequences must be followed exactly.
Command
commands,
M58LT256JST, M58LT256JSB
for a summary of the
Table 6: Factory

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