M58LT256JST8ZA6E NUMONYX, M58LT256JST8ZA6E Datasheet - Page 47

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M58LT256JST8ZA6E

Manufacturer Part Number
M58LT256JST8ZA6E
Description
IC FLASH 256MBIT 85NS 64TBGA
Manufacturer
NUMONYX
Datasheet

Specifications of M58LT256JST8ZA6E

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
256M (16Mx16)
Speed
85ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 2 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-TBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M58LT256JST8ZA6E
Manufacturer:
STM
Quantity:
624
Part Number:
M58LT256JST8ZA6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
M58LT256JST, M58LT256JSB
8
Dual operations and multiple bank architecture
The multiple bank architecture of the M58LT256JST/B gives greater flexibility for software
developers to split the code and data spaces within the memory array. The dual operations
feature simplifies the software management of the device by allowing code to be executed
from one bank while another bank is being programmed or erased.
The dual operations feature means that while programming or erasing in one bank, read
operations are possible in another bank with zero latency (only one bank at a time is allowed
to be in program or erase mode).
If a read operation is required in a bank, which is programming or erasing, the program or
erase operation can be suspended. Also if the suspended operation is erase, then a
program command can be issued to another block. This means the device can have one
block in erase suspend mode, one programming, and other banks in read mode.
Bus read operations are allowed in another bank between setup and confirm cycles of
program or erase operations.
By using a combination of these features, read operations are possible at any moment in the
M58LT256JST/B device.
Dual operations between the parameter bank and either of the CFI, the OTP or the
electronic signature memory space are not allowed.
are allowed or not between the CFI, the OTP, the electronic signature locations and the
memory array.
Tables
13
and
14
show the dual operations possible in other banks and in the same bank.
Dual operations and multiple bank architecture
Table 15
shows which dual operations
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