M58LT256JST8ZA6E NUMONYX, M58LT256JST8ZA6E Datasheet - Page 52

• Manufacturer Part Number: M58LT256JST8ZA6E
• Description: IC FLASH 256MBIT 85NS 64TBGA
• Manufacturer: NUMONYX

Specifications of M58LT256JST8ZA6E

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 256M (16Mx16)
• Speed: 85ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 2 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-TBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Program and erase times and endurance cycles
10
Table 16.
1. T
2. Values are liable to change with the external system-level overhead (command sequence and Status Register polling
3. Excludes the time needed to execute the command sequence.
4. This is an average value on the entire device.
52/108
Erase
Program
Suspend latency
Program/erase
cycles (per block)
Erase
Program
Program/erase
cycles (per block)
Blank check
execution).
A
= –25 to 85 °C; V
Parameter
(3)
(3)
Program and erase times and endurance cycles
The program and erase times and the number of program/erase cycles per block are shown
in
best case is when all the bits in the block are at ‘0’ (pre-programmed). The worst case is
when all the bits in the block are at ‘1’ (not pre-programmed). Usually, the system overhead
is negligible with respect to the erase time. In the M58LT256JST/B the maximum number of
program/erase cycles depends on the V
Program/erase times and endurance cycles
Table
DD
Parameter block (16 KWord)
Main Block
(64 KWord)
Single word
Buffer (32 words) (buffer program)
Main block (64 KWord)
Program
Erase
Main blocks
Parameter blocks
Parameter block (16 KWord)
Main block (64 KWord)
Single word
Buffer (32
words)
Main Block
(64 KWords)
Bank (16
Mbits)
Main blocks
Parameter blocks
Main blocks
Parameter blocks
16. Exact erase times may change depending on the memory array condition. The
= 1.7 V to 2 V; V
Pre-programmed
Not pre-programmed
Word Program
Buffer Program
Word program
Buffer enhanced factory
program
Buffer program
Buffer enhanced factory program
Buffer program
Buffer enhanced factory program
Buffer program
Buffer enhanced factory program
DDQ
= 1.7 V to 3.6 V.
(4)
Condition
PP
voltage supply used.
(1), (2)
100 000
100 000
Min
M58LT256JST, M58LT256JSB
Typ
300
600
180
150
360
300
0.4
1.2
5.8
4.8
0.5
0.4
80
80
20
20
80
2
1
1
5
Typical after
100 kW/E
cycles
1
3
1200
1200
1000
1000 cycles
2500 cycles
Max
400
400
400
400
2.5
2.5
25
25
4
4
4
cycles
cycles
Unit
ms
ms
ms
ms
ms
µs
µs
µs
µs
µs
µs
µs
µs
µs
s
s
s
s
s
s
s