M58LT256JST8ZA6E NUMONYX, M58LT256JST8ZA6E Datasheet - Page 54

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M58LT256JST8ZA6E

Manufacturer Part Number
M58LT256JST8ZA6E
Description
IC FLASH 256MBIT 85NS 64TBGA
Manufacturer
NUMONYX
Datasheet

Specifications of M58LT256JST8ZA6E

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
256M (16Mx16)
Speed
85ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 2 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-TBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M58LT256JST8ZA6E
Manufacturer:
STM
Quantity:
624
Part Number:
M58LT256JST8ZA6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
DC and AC parameters
12
54/108
DC and AC parameters
This section summarizes the operating measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics tables that
follow are derived from tests performed under the measurement conditions summarized in
Table 18: Operating and AC measurement
operating conditions in their circuit match the operating conditions when relying on the
quoted parameters.
Table 18.
Figure 7.
V
V
V
V
Ambient operating temperature
Load capacitance (C
Input rise and fall times
Input pulse voltages
Input and output timing ref. voltages
DD
DDQ
PP
PP
supply voltage (factory environment)
supply voltage (application environment)
supply voltage
supply voltage
Operating and AC measurement conditions
AC measurement I/O waveform
L
)
Parameter
V DDQ
0V
conditions. Designers should check that the
–0.4
Min
–25
2.7
8.5
1.7
M58LT256JST/B
M58LT256JST, M58LT256JSB
0 to V
V DDQ /2
V
DDQ
AI06161
85
30
DDQ
V
/2
DDQ
Max
3.6
9.5
2.0
85
5
+ 0.4
Units
°C
pF
ns
V
V
V
V
V
V

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