M58LT256JST8ZA6E NUMONYX, M58LT256JST8ZA6E Datasheet - Page 37

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M58LT256JST8ZA6E

Manufacturer Part Number
M58LT256JST8ZA6E
Description
IC FLASH 256MBIT 85NS 64TBGA
Manufacturer
NUMONYX
Datasheet

Specifications of M58LT256JST8ZA6E

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
256M (16Mx16)
Speed
85ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 2 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-TBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M58LT256JST8ZA6E
Manufacturer:
STM
Quantity:
624
Part Number:
M58LT256JST8ZA6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
M58LT256JST, M58LT256JSB
Table 9.
1. Logic level '1' is High, '0' is Low.
SR7 P/EC status
SR6 Erase suspend status Status
SR5
SR4 Program status
SR3 V
SR2
SR1
SR0
Bit
Erase/blank check
status
Program suspend
status
Block protection
status
Bank write status
Multiple word
program status (buffer
enhanced factory
program mode)
PP
status
Status Register bits
Name
Status
Error
Error
Error
Status
Error
Status
Status
Type
level
Logic
'1'
'0'
'1'
'0'
'1'
'0'
'1'
'0'
'1'
'0'
'1'
'0'
'1'
'0'
'1'
'0'
'1'
'0'
(1)
Ready
Busy
Erase suspended
Erase In progress or completed
Erase/blank check error
Erase/blank check success
Program error
Program success
V
V
Program suspended
Program in progress or completed
Program/erase on protected block, abort
No operation to protected blocks
SR7 = ‘0’
SR7 = ‘0’
SR7 = ‘1’ Not allowed
SR7 = ‘0’
SR7 = ‘1’
SR7 = ‘0’
SR7 = ‘1’ Not allowed
SR7 = ‘1’
PP
PP
invalid, abort
OK
Program or erase operation in a bank
other than the addressed bank
No program or erase operation in the
device
Program or erase operation in
addressed bank
The device is NOT ready for the next
buffer loading or is going to exit the
BEFP mode
The device has exited the BEFP
mode
The device is ready for the next buffer
loading
Definition
Status Register
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