AS4C8M16S-6TAN Alliance Memory, AS4C8M16S-6TAN Datasheet - Page 8

• Manufacturer Part Number: AS4C8M16S-6TAN
• Description: DRAM 128Mb, 3.3V, 166Mhz 8M x 16 SDRAM
• Manufacturer: Alliance Memory

Specifications of AS4C8M16S-6TAN

• Rohs: yes
• Data Bus Width: 16 bit
• Organization: 8 Mbit x 16
• Package / Case: TSOP-54
• Memory Size: 128 Mbit
• Maximum Clock Frequency: 143 MHz
• Access Time: 5.4 ns
• Supply Voltage - Max: 4.6 V
• Supply Voltage - Min: - 1 V
• Maximum Operating Current: 110 mA
• Maximum Operating Temperature: + 105 C
• Factory Pack Quantity: 108

t
CAS# latency=3
COMMAND
DQM
CLK
CK3,
FEBRUARY 2011
CLK
DQM
COMMAND
CAS# latency=2
t
CK2,
DQ
t
CLK
DQM
COMMAND
CAS# latency=2
CK2,
PrechargeAll command to the same bank. The following figure shows the optimum time that
BankPrecharge/ PrechargeAll command is issued in different CAS# latency.
DQ
DQ
A read burst without the auto precharge function may be interrupted by a BankPrecharge/
Figure 7. Read to Write Interval
Figure 8. Read to Write Interval
Figure 6. Read to Write Interval
T0
NOP
T0
T0
NOP
NOP
READ A
T1
T1
NOP
T1
NOP
T2
NOP
READ A
ACTIVATE
T2
T2
BANKA
T3
NOP
the Write Command
Must be Hi-Z before
T3
T3
Must be Hi-Z before
the Write Command
NOP
NOP
the Write Command
Must be Hi-Z before
DOUT A
T4
NOP
(Burst Length ≧ 4, CAS# Latency = 3)
8
T4
(Burst Length ≥ 4, CAS# Latency = 2)
NOP
(Burst Length ≥ 4, CAS# Latency = 2)
T4
0
NOP
T5
NOP
WRITE B
T5
T5
READ A
DIN B
T6
WRITE B
DIN B
0
T6
T6
NOP
DIN B
WRITE A
DIN A
0
T7
1
NOP
DIN B
0
Don’t Care
T7
NOP
DIN B
T7
1
Don’t Care
DIN A
NOP
T8
DIN B
2
NOP
1
T8
DIN B
NOP
2
DIN A
T8
NOP
AS4C8M16S
3
2
DIN A
T9
NOP
3