AS4C8M16S-6TAN Alliance Memory, AS4C8M16S-6TAN Datasheet - Page 40

• Manufacturer Part Number: AS4C8M16S-6TAN
• Description: DRAM 128Mb, 3.3V, 166Mhz 8M x 16 SDRAM
• Manufacturer: Alliance Memory

Specifications of AS4C8M16S-6TAN

• Rohs: yes
• Data Bus Width: 16 bit
• Organization: 8 Mbit x 16
• Package / Case: TSOP-54
• Memory Size: 128 Mbit
• Maximum Clock Frequency: 143 MHz
• Access Time: 5.4 ns
• Supply Voltage - Max: 4.6 V
• Supply Voltage - Min: - 1 V
• Maximum Operating Current: 110 mA
• Maximum Operating Temperature: + 105 C
• Factory Pack Quantity: 108

Figure 33. Interleaved Column Write Cycle
BA0,1
A0-A9,
A11
CLK
A10
CS#
RAS#
DQM
CKE
WE#
DQ
CAS#
FEBRUARY 2011
FEBRUARY 2011
Hi-Z
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Cammand
Activate
Bank A
RAx
RAx
t
t
RRD
RCD
>t
RRD(min)
Write
Command
Bank A
CAx
DAx0 DAx1 DAx2 DAx3 DBw0 DBw1 DBx0 DBx1 DBy0 DBy1 DAy0 DAy1 DBz0
Activate
Command
Bank B
RBw
RBw
Write
Command CommandCommand CommandCommand
Bank B
CBw
Write
Bank B
CBx
(Burst Length=4)
Write
Bank B
40
CBy
Write
Bank A
CAy
Write
Bank B
t
CBz
WR
Precharge
Command
Bank A
DBz1
DBz2 DBz3
Don’t Care
t
WR
AS4C8M16S
AS4C8M16S
Command
Precharge
Bank B