AS4C8M16S-6TAN Alliance Memory, AS4C8M16S-6TAN Datasheet - Page 18

• Manufacturer Part Number: AS4C8M16S-6TAN
• Description: DRAM 128Mb, 3.3V, 166Mhz 8M x 16 SDRAM
• Manufacturer: Alliance Memory

Specifications of AS4C8M16S-6TAN

• Rohs: yes
• Data Bus Width: 16 bit
• Organization: 8 Mbit x 16
• Package / Case: TSOP-54
• Memory Size: 128 Mbit
• Maximum Clock Frequency: 143 MHz
• Access Time: 5.4 ns
• Supply Voltage - Max: 4.6 V
• Supply Voltage - Min: - 1 V
• Maximum Operating Current: 110 mA
• Maximum Operating Temperature: + 105 C
• Factory Pack Quantity: 108

Table 15. Recommended D.C. Operating Conditions
Operating Current
Precharge Standby Current in non-power down mode
Precharge Standby Current in non-power down mode
Precharge Standby Current in power down mode
Precharge Standby Current in power down mode
Active Standby Current in non-power down mode
Active Standby Current in non-power down mode
Operating Current (Burst mode)
Refresh Current
Self Refresh Current
t
t
t
One bank active
Input signals are changed every 2clks
t
t
Input signals are changed every 2clks
CKE ≥ V
t
t
RC
t
CK
CK
CK
CK
CK
RC
CKE ≤ 0.2V ; for other inputs V
CK
FEBRUARY 2011
≥ t
= ∞, CLK ≤ V
= ∞, CKE ≤ V
= 15ns, CKE ≤ V
= 15ns, CKE ≥ V
=t
≥ t
= 15ns, CS# ≥ V
CK
RC
RC
(min),
(min), Outputs Open
(min)
IH
(min), CLK ≤ V
Description/Test condition
Outputs Open, Multi-bank interleave
IL
IL
(max), CKE ≥ V
(max)
IH
IH
IL
(max)
(min), CS# ≥ V
(min), CKE ≥ V
IL
(max), t
IH
≥ V
IH
CK
DD
IH
IH
= ∞
- 0.2, V
(min)
IL
≤ 0.2V
18
Symbol
I
I
I
I
I
DD2NS
I
DD2PS
DD3NS
I
I
I
I
DD2N
DD2P
DD3N
DD1
DD4
DD5
DD6
(VDD = 3.3V ± 0.3V, T
120
140
200
20
15
30
25
-6
2
2
2
Max.
-7
110
130
200
20
15
30
25
2
2
2
A
= 0~70°C)
AS4C8M16S
Unit Note
mA
mA
3, 4
3
3