AS6C4008-55SIN ALLIANCE MEMORY, AS6C4008-55SIN Datasheet

SRAM, 4MB, 2.7V-5.5V, 512KX8, SOP32

AS6C4008-55SIN

Manufacturer Part Number
AS6C4008-55SIN
Description
SRAM, 4MB, 2.7V-5.5V, 512KX8, SOP32
Manufacturer
ALLIANCE MEMORY
Datasheet

Specifications of AS6C4008-55SIN

Memory Size
4Mbit
Access Time
55ns
Supply Voltage Range
2.7V To 5.5V
Memory Case Style
SOP
No. Of Pins
32
Operating Temperature Range
-40°C To +85°C
Operating Temperature Max
85°C
Operating
RoHS Compliant
Memory Configuration
512K X 8
Rohs Compliant
Yes

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FEATURES
FUNCTIONAL BLOCK DIAGRAM
DQ0-DQ7
Operatingcurrent : 30/20mA (TYP.)
Standby current : 4 µA (TYP.) C-version
A0-A18
Access time : 55 ns
Low power consumption:
Single 2.7V ~ 5.5V power supply
Fully Compatible with all Competitors 5V product
Fully Compatible with all Competitors 3.3V product
Fully static operation
Tri-state output
Data retention voltage : 2.0V (MIN.)
All products ROHS Compliant
Package
OCTOBER 2007
January 2007
10/OCTOBER/07, V.1.1
WE#
CE#
OE#
Vcc
Vss
32-pin 8mm x 20mm TSOP-I
32-pin 450 mil SOP
32-pin 600 mil P-DIP
32-pin 8mm x 13.4mm sTSOP
*36-ball 6mm x 8mm TFBGA
*
DECODER
CONTROL
I/O DATA
CIRCUIT
CIRCUIT
:
:
512K X 8 BIT LOW POWER CMOS SRAM
MEMORY ARRAY
COLUMN I/O
512Kx8
Alliance Memory Inc.
512K X 8 BIT LOW POWER CMOS SRAM
GENERAL DESCRIPTION
The AS6C4008 is a 4,194,304-bit low power
CMOS static random access memory organized as
524,288 words by 8 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
The AS6C4008 is well designed for very low power
system applications, and particularly well suited for
battery back-up non -volatile memory application.
T he AS6C4008 operates from a single power
supply of 2.7V ~ 5.5V
.
PIN DESCRIPTION**
SYMBOL
A0 - A18
DQ0 – DQ7
CE#
WE#
OE#
V
V
NC
CC
SS
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Power Supply
Ground
No Connection
Page 1 of 1
AS6C4008

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AS6C4008-55SIN Summary of contents

Page 1

... CMOS technology. Its standby current is stable within the range of operating temperature. The AS6C4008 is well designed for very low power system applications, and particularly well suited for battery back-up non -volatile memory application AS6C4008 operates from a single power supply of 2 ...

Page 2

... Vcc A15 A17 WE# A11 A13 A8 3 A13 A17 6 A15 7 AS6C4008 A11 Vcc 8 A18 9 OE# A16 10 A14 11 A10 A12 12 CE DQ7 DQ6 DQ5 DQ4 DQ3 Alliance Memory Inc. AS6C4008 TSOP-I/sTSOP Page OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 Vss DQ2 DQ1 DQ0 ...

Page 3

... 0.2V ≧ (min 3.0V for pulse width less than 10ns (TYP.) and T = 25º Alliance Memory Inc. AS6C4008 RATING UNIT -0 70(C grade) ºC -40 to 85(I grade) -65 to 150 º 260 ºC SUPPLY CURRENT High-Z I SB1 High-Z ...

Page 4

... C = 5pF. Transition is measured ±500mV from steady state. OW WHZ L 10/OCTOBER/07, V.1.1 ® WHZ High-Z ( Data Valid WHZ High-Z ( Data Valid must be greater than t WP WHZ Alliance Memory Inc. AS6C4008 ( allow the drivers to turn off and data Page ...

Page 5

... SYMBOL MIN I 1. 30pF + 1TTL SYM. MIN. MAX ACE CLZ t * OLZ t * CHZ t * OHZ t OH SYM. MIN. MAX WHZ Alliance Memory Inc., AS6C4008 MAX 0. -1mA/2mA OH OL AS6C4008-55 MIN. MAX. MIN. MAX AS6C4008-55 MIN. MAX. MIN. MAX Page UNIT pF pF UNIT UNIT ...

Page 6

... V.1.1 ® Data Valid ACE OLZ t CLZ Data Valid . ; otherwise t is the limiting parameter 5pF. Transition is measured ±500mV from steady state less than less than t CHZ CLZ OHZ Alliance Memory Inc. AS6C4008 OHZ t CHZ High-Z OLZ. Page ...

Page 7

... C = 5pF. Transition is measured ±500mV from steady state. OW WHZ L 10/OCTOBER/07, V.1.1 ® WHZ High-Z ( Data Valid WHZ High-Z ( Data Valid must be greater than t WP WHZ Alliance Memory Inc. AS6C4008 ( allow the drivers to turn off and data Page ...

Page 8

... Read Cycle Time **C=Commercial temperature/I=Industrial temperature RC * DATA RETENTION WAVEFORM Vcc(min.) Vcc t CDR V IH CE# 10/OCTOBER/07, V.1.1 ® CE 0.2V ≧ 2. 0.2V **I ≧ CC See Data Retention Waveforms (below) V ≧ 2.0V DR CE# ≧ cc-0.2V V Alliance Memory Inc. AS6C4008 MIN. TYP. MAX. UNIT 2 µ µ Vcc(min Page ...

Page 9

... E 0.445 ± 0.005 11.303 ± 0.127 E1 0.555 ± 0.012 14.097 ± 0.305 e 0.050(TYP) 1.270(TYP) L 0.0347 ± 0.008 0.881 ± 0.203 L1 0.055 ± 0.008 1.397 ± 0.203 S 0.026(MAX) 0.660 (MAX) y 0.004(MAX) 0.101(MAX Θ 0 -10 0 -10 Alliance Memory Inc. AS6C4008 o Page ...

Page 10

... HD 0.787 ± 0.008 20.00 ± 0.20 L 0.0197 ± 0.004 0.50 ± 0.10 L1 0.0315 ± 0.004 0.08 ± 0.10 y 0.003 (MAX) 0.076 (MAX Θ 0 ~ ~ 5 Alliance Memory Inc. AS6C4008 -0.03 o Page ...

Page 11

... L 0.0197 ± 0.004 0.50 ± 0.10 L1 0.0315 ± 0.004 0.8 ± 0.10 y 0.003 (MAX) 0.076 (MAX Θ 0 ~ ~ 5 Alliance Memory Inc. AS6C4008 12° (2x) y Seating Plane 12° (2X) SEATING PLANE L 12° (2X) L1 "A" DETAIL VIEW o Page GAUGE PLANE 0 ...

Page 12

X 8 BIT LOW POWER CMOS SRAM 36 ball 6mm × 8mm TFBGA Package Outline Dimension ® Page ...

Page 13

X 8 BIT LOW POWER CMOS SRAM 32 pin 600 mil P-DIP Package Outline Dimension Note : D/E1/S dimension do not include mold flash. ® UNIT INCH(BASE) SYM. A1 0.001 (MIN) A2 0.150 ± 0.005 B 0.018 ± 0.005 ...

Page 14

... OCTOBER 2007 512K X 8 BIT LOW POWER CMOS SRAM ORDERING INFORMATION Ordering Codes Alliance Organization VCC range 512k x 8 AS6C4008-55PCN 512k x 8 AS6C4008-55SIN 512k x 8 AS6C4008-55TIN 512k x 8 AS6C4008-55STIN 512k x 8 AS6C4008-55BIN Part numbering system AS6C 4008 - 55 Package Options pin 600 mil P-DIP ...

Page 15

... Alliance products in such life-supporting systems implies that the manufacturer assumes all risk of such use and agrees to indemnify Alliance against all claims arising from such use. ® Copyright © Alliance Memory All Rights Reserved Part Number: AS6C4008 Document Version: v. 1.1 Page ...

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