AS4C8M16S-6TAN Alliance Memory, AS4C8M16S-6TAN Datasheet - Page 16

no-image

AS4C8M16S-6TAN

Manufacturer Part Number
AS4C8M16S-6TAN
Description
DRAM 128Mb, 3.3V, 166Mhz 8M x 16 SDRAM
Manufacturer
Alliance Memory
Datasheet

Specifications of AS4C8M16S-6TAN

Rohs
yes
Data Bus Width
16 bit
Organization
8 Mbit x 16
Package / Case
TSOP-54
Memory Size
128 Mbit
Maximum Clock Frequency
143 MHz
Access Time
5.4 ns
Supply Voltage - Max
4.6 V
Supply Voltage - Min
- 1 V
Maximum Operating Current
110 mA
Maximum Operating Temperature
+ 105 C
Factory Pack Quantity
108
15 Clock Suspend Mode Entry / PowerDown Mode Entry command (CKE = "L")
16 Clock Suspend Mode Exit / PowerDown Mode Exit command (CKE= "H")
17 Data Write / Output Enable, Data Mask / Output Disable command (DQM = "L", "H")
14 SelfRefresh Exit command
FEBRUARY 2011
NOP or Device Deselect commands must be issued for t
completion of any bank currently being internally refreshed. If auto refresh cycles in bursts are
performed during normal operation, a burst of 4096 auto refresh cycles should be completed just
prior to entering and just after exiting the SelfRefresh mode.
the subsequent cycle by issuing this command (asserting CKE "LOW"). The device operation is held
intact while CLK is suspended. On the other hand, when all banks are in the idle state, this
command performs entry into the PowerDown mode. All input and output buffers (except the CKE
buffer) are turned off in the PowerDown mode. The device may not remain in the Clock Suspend or
PowerDown state longer than the refresh period (64ms) since the command does not perform any
refresh operations.
from the subsequent cycle by providing this command (asserting CKE "HIGH", the command should
be NOP or deselect). When the device is in the PowerDown mode, the device exits this mode and all
disabled buffers are turned on to the active state. t
the PowerDown mode. Any subsequent commands can be issued after one clock cycle from the end
of this command.
the input data. During a read cycle, the DQM functions as the controller of output buffers. DQM is
also used for device selection, byte selection and bus control in a memory system.
This command is used to exit from the SelfRefresh mode. Once this command is registered,
When the SDRAM is operating the burst cycle, the internal CLK is suspended (masked) from
When the internal CLK has been suspended, the operation of the internal CLK is reinitiated
During a write cycle, the DQM signal functions as a Data Mask and can control every word of
16
PDE
(min.) is required when the device exits from
XSR
(min.) because time is required for the
AS4C8M16S

Related parts for AS4C8M16S-6TAN