AS6C8008-55ZIN ALLIANCE MEMORY, AS6C8008-55ZIN Datasheet
AS6C8008-55ZIN
Specifications of AS6C8008-55ZIN
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AS6C8008-55ZIN Summary of contents
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... It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The AS6C8008 is well designed for very low power system applications, and particularly well suited for battery back-up nonvolatile memory application. ...
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... X 8 BIT LOW POWER CMOS SRAM OE# 40 CE2 DQ7 35 DQ6 34 Vss 33 Vcc 32 DQ5 31 DQ4 A10 26 A11 25 A12 24 A13 23 A14 TSOP-II Alliance Memory Inc. AS6C8008 CE2 CE DQ0 DQ4 D Vss DQ1 A17 A7 DQ5 Vcc E Vcc DQ2 NC A16 DQ6 Vss F DQ3 NC A14 A15 NC DQ7 A12 ...
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... CE2 V -0.2V ≦ ≧ 0mA I/O Other pins at 0. -0.2V CC CE# V -0.2V ≧ CE2 ≦ 0.2V Other pins at 0. -0.2V CC Alliance Memory Inc. AS6C8008 RATING UNIT -0.5 to 6 -40 to 85(I grade) ℃ -65 to 150 ℃ 260 ℃ SUPPLY CURRENT High-Z I ...
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... JANUARY/2008, V 1.0 512K X 8 BIT LOW POWER CMOS SRAM (TYP.) and ℃ SYMBOL MIN I/O 0. 3ns 1. 30pF + 1TTL SYM. AS6C8008 ACE CLZ t OLZ t CHZ t OHZ t OH AS6C8008 SYM WHZ Alliance Memory Inc. AS6C8008 MAX UNIT 0. -1mA/2mA OH OL UNIT UNIT Page ...
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... X 8 BIT LOW POWER CMOS SRAM Data Valid ACE OLZ t CLZ Data Valid CE2 = high ., . CE2 = high; otherwise 5pF. Transition is measured ±500mV from steady state less than less than t CHZ CLZ OHZ Alliance Memory Inc. AS6C8008 OHZ t CHZ High-Z is the limiting parameter. AA OLZ. Page ...
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... Transition is measured ±500mV from steady state. OW WHZ L JANUARY/2008, V 1.0 512K X 8 BIT LOW POWER CMOS SRAM WHZ High-Z ( Data Valid WHZ High-Z ( Data Valid must be greater than t WP WHZ Alliance Memory Inc. AS6C8008 ( allow the drivers to turn off and data Page ...
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... CE2 0. 2.0V CC > _ > 0.2V or CE2 0.2V CE Other pins at 0. 0.2V CC See Data Retention Waveforms (below) CE# ( controlled) > 2.0V DR > _ CE# Vcc-0.2V (CE2 controlled) > 2.0V DR > _ CE2 0.2V Alliance Memory Inc. AS6C8008 MIN. TYP. MAX. UNIT 2 µ Vcc(min Vcc(min Page ...
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... Alliance Memory Inc. AS6C8008 NOM. MAX. - 47.2 3.9 5.9 39.4 41.3 - 17.7 - 8.3 725 733 463 473 400 408 31.5 - 19.7 23.6 31 Page ...
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... January 2007 JANUARY 2008 1024K X 8 BIT SUPER LOW POWER CMOS SRAM 48-ball 6mm × 8mm TFBGA Package Outline Dimension JANUARY/2008, V 1.0 512K X 8 BIT LOW POWER CMOS SRAM Alliance Memory Inc. AS6C8008 Page ...
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... JANUARY 2008 January 2007 1024K X 8 BIT LOW POWER CMOS SRAM ORDERING INFORMATION Alliance Organization AS6C8008-55ZIN 1024K x 8 AS6C8008-55BIN 1024K x 8 PART NUMBERING SYSTEM AS6C 8008 Device Number 380 =8M low power S RAM prefix JANUAR/2008, V 1.0 512K X 8 BIT LOW POWER CMOS SRAM ...
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... Alliance against allclaims arising from such use. JANUARY/2008, V 1.0 512K X 8 BIT LOW POWER CMOS SRAM Alliance Memory Inc. AS6C8008 Copyright © Alliance Memory All Rights Reserved Page ...