AS4C8M16S-6TAN Alliance Memory, AS4C8M16S-6TAN Datasheet - Page 17

• Manufacturer Part Number: AS4C8M16S-6TAN
• Description: DRAM 128Mb, 3.3V, 166Mhz 8M x 16 SDRAM
• Manufacturer: Alliance Memory

Specifications of AS4C8M16S-6TAN

• Rohs: yes
• Data Bus Width: 16 bit
• Organization: 8 Mbit x 16
• Package / Case: TSOP-54
• Memory Size: 128 Mbit
• Maximum Clock Frequency: 143 MHz
• Access Time: 5.4 ns
• Supply Voltage - Max: 4.6 V
• Supply Voltage - Min: - 1 V
• Maximum Operating Current: 110 mA
• Maximum Operating Temperature: + 105 C
• Factory Pack Quantity: 108

Table 12. Absolute Maximum Rating
Table 13. Recommended D.C. Operating Conditions
Table 14. Capacitance
Note: These parameters are periodically sampled and are not 100% tested.
V
V
Symbol
Symbol
Symbol
T
DD
IN
SOLDER
V
T
I
V
V
C
V
V
, V
V
P
OUT
I
, V
T
DDQ
I
C
FEBRUARY 2011
STG
OL
DD
OH
IL
OL
I/O
IH
D
IL
A
I
OUT
DDQ
( 0V ≤ V
Input Capacitance
Input/Output Capacitance
Parameter
Power Supply Voltage(for I/O Buffer)
Soldering Temperature (10 second)
IN
Output disable, 0V ≤ V
LVTTL Output "H" Level Voltage
LVTTL Output "L" Level Voltage
≤ V
Short Circuit Output Current
LVTTL Input High Voltage
LVTTL Input Low Voltage
DD
Output Leakage Current
Power Supply Voltage
Input Leakage Current
Power Supply Voltage
Ambient Temperature
Storage Temperature
Input, Output Voltage
, All other pins not under test = 0V )
Power Dissipation
(VDD = 3.3V, f = 1MHz, T
Item
( I
( I
Parameter
OUT
OUT
= -2mA )
= 2mA )
OUT
≤ V
DDQ
)
A
17
= 25°C)
(T
Min.
- 0.3
- 10
- 10
Min.
3.0
3.0
2.0
2.4
A
－
= 0~70°C)
2
4
- 1.0 ~ 4.6
- 55 ~ 125
-1.0 ~ 4.6
Typ.
Rating
0 ~ 70
-6/7
260
3.3
3.3
3.0
50
－
－
－
－
0
1
Max.
V
6.5
Max.
DDQ
5
3.6
3.6
0.8
0.4
10
10
－
+0.3
AS4C8M16S
Unit Note
Unit Note
Unit
mA
µA
µA
°C
°C
°C
pF
pF
W
V
V
V
V
V
V
V
V
1
1
1
1
1
1
1
2
2
2
2