as4c8m16s Alliance Memory, Inc, as4c8m16s Datasheet

as4c8m16s

Manufacturer Part Number

as4c8m16s

Description

128mb/ 8m X 16 Bit Synchronous Dram Sdram

Manufacturer

Alliance Memory, Inc

Datasheet

1.AS4C8M16S.pdf (52 pages)

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Part Number

Manufacturer

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Company:

H&T Electronics

Part Number:

as4c8m16s-7TCN

Quantity:

5 550

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Alliance Memory Confidential

Features

• Fast access time from clock: 5/5.4 ns

• Fast clock rate: 166/143 MHz

• Fully synchronous operation

• Internal pipelined architecture

• 2M word x 16-bit x 4-bank

• Programmable Mode registers

• Auto Refresh and Self Refresh

• 4096 refresh cycles/64ms

• CKE power down mode

• Single +3.3V ± 0.3V power supply

• Interface: LVTTL

• 54-pin 400 mil plastic TSOP II package

Overview

The AS4C8M16S SDRAM is a high-speed CMOS

synchronous DRAM containing 128 Mbits. It is

internally configured as 4 Banks of 2M word x 16

DRAM with a synchronous interface (all signals are

registered on the positive edge of the clock signal,

CLK). Read and write accesses to the SDRAM are

burst oriented; accesses start at a selected location

and continue for a programmed number of locations

in a programmed sequence. Accesses begin with

the registration of a BankActivate command which

is then followed by a Read or Write command.

Read or Write burst lengths of 1, 2, 4, 8, or full page,

with a burst termination option. An auto precharge

function may be enabled to provide a self-timed row

precharge that is initiated at the end of the burst

sequence. The refresh functions, either Auto or Self

Refresh are easy to use.

system can choose the most suitable modes to

maximize its performance. These devices are well

suited for applications requiring high memory

bandwidth and particularly well suited to high

performance PC applications.

- CAS Latency: 2, or 3

- Burst Length: 1, 2, 4, 8, or full page

- Burst Type: interleaved or linear burst

- Burst stop function

- Pb free and Halogen free

The AS4C8M16S provides for programmable

FEBRUARY 2011

By having a programmable mode register, the

128Mb/ 8M x 16 bit Synchronous DRAM (SDRAM)

Table1. Key Specifications

tCK3 Clock Cycle time(min.)

tAC3 Access time from CLK(max.)

tRAS Row Active time(min.)

tRC Row Cycle time(min.)

Table 2. Ordering Information

T: indicates TSOPII Package,

N: indicates Pb and Halogen Free for TSOPII Package

Figure 1. Pin Assignment (Top View)

A10/AP

AS4C8M16S -6TCN

AS4C8M16S -7TCN

VDDQ

LDQM

VDDQ

VSSQ

CAS#

RAS#

WE#

VDD

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

BA1

VDD

BA0

CS#

Part Number

AS4C8M16S

Frequency

166MHz

143MHz

VSS

DQ9

VSS

NC/RFU

UDQM

CLK

DQ15

VSSQ

DQ14

DQ13

VDDQ

DQ12

DQ11

VSSQ

DQ10

VDDQ

DQ8

CKE

A11

VSS

AS4C8M16S

Package

TSOP II

- 6/7

42/42 ns

60/63 ns

6/7

5/5.4 ns

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