CED3301_11 CET [Chino-Excel Technology], CED3301_11 Datasheet - Page 2

• Manufacturer Part Number: CED3301_11
• Description: P-Channel Enhancement Mode Field Effect Transistor
• Manufacturer: CET [Chino-Excel Technology]

Electrical Characteristics
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Parameter
b
c
c
b
T c = 25 C unless otherwise noted
R
Symbol
V
BV
t
t
C
V
C
Q
I
GS(th)
DS(on)
C
d(on)
d(off)
Q
I
I
GSSF
Q
GSSR
I
t
DSS
t
SD
oss
iss
rss
gd
S
r
f
gs
g
DSS
CED3301/CEU3301
2
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
GS
DS
GS
GS
GS
GS
GS
DS
DD
GS
DS
GS
GS
Test Condition
= 0V, I
= -30V, V
= 20V, V
= -20V, V
= V
= -10V, I
= -4.5V, I
= -15V, V
= -15V, I
= -10V, R
= -15V, I
= -10V
= 0V, I
DS
, I
D
S
D
= -250 µ A
= -2.3A
D
D
D
D
DS
GS
DS
GS
GEN
= -250 µ A
= -5.3A,
= -5.3A
= -1A,
= -2A
= 0V
= 0V
= 0V
= 0V,
= 6Ω
Min
-30
-1
1130
Typ
220
180
26
38
14
40
10
24
6
3
7
-100
Max
100
-1.2
-28
32
50
28
12
80
20
31
-1
-3
Units
mΩ
mΩ
nA
nA
nC
nC
nC
µ A
pF
pF
pF
ns
ns
ns
ns
V
V
A
V