ST7FL15F1MAE STMICROELECTRONICS [STMicroelectronics], ST7FL15F1MAE Datasheet - Page 111

• Manufacturer Part Number: ST7FL15F1MAE
• Description: 8-bit MCU for automotive with single voltage Flash/ROM memory, data EEPROM, ADC, 5 timers, SPI
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

ELECTRICAL CHARACTERISTICS (cont’d)
13.7 EMC CHARACTERISTICS
Susceptibility tests are performed on a sample ba-
sis during product characterization.
13.7.1 Functional EMS (Electro Magnetic
Susceptibility)
Based on a simple running application on the
product (toggling two LEDs through I/O ports), the
product is stressed by two electro magnetic events
until a failure occurs (indicated by the LEDs).
■
■
A device reset allows normal operations to
resume. The test results are given in the table be-
low based on the EMS levels and classes defined
in application note AN1709.
13.7.1.1 Designing Hardened Software to Avoid
Noise Problems
EMC characterization and optimization are per-
formed at component level with a typical applica-
13.7.2 Electro Magnetic Interference (EMI)
Based on a simple application running on the
product (toggling two LEDs through the I/O ports),
the product is monitored in terms of emission. This
emission test is in line with the norm SAE J 1752/
3 which specifies the board and the loading of
each pin.
Notes:
1. Data based on characterization results, not tested in production.
Symbol
V
V
S
Symbol
FESD
FFTB
EMI
ESD: Electro-Static Discharge (positive and
negative) is applied on all pins of the device until
a functional disturbance occurs. This test
conforms with the IEC 1000-4-2 standard.
FTB: A Burst of Fast Transient voltage (positive
and negative) is applied to V
a 100pF capacitor, until a functional disturbance
occurs. This test conforms with the IEC 1000-4-
4 standard.
Voltage limits to be applied on any I/O pin to induce a function-
al disturbance
Fast transient voltage burst limits to be applied through 100pF
on V
Peak level
DD
Parameter
and V
1)
DD
pins to induce a functional disturbance
DD
Parameter
V
SO20 package,
conforming to SAE J 1752/3
and V
DD
= 5V, T
SS
Conditions
through
A
= 25°C,
tion environment and simplified MCU software. It
should be noted that good EMC performance is
highly dependent on the user application and the
software in particular.
Therefore, it is recommended that EMC software
optimization and prequalification tests are made
relative to the EMC level requested for the user's
application.
Software recommendations:
The software flowchart must include the manage-
ment of runaway conditions such as:
– Corrupted program counter
– Unexpected reset
– Critical data corruption (control registers...)
Prequalification trials:
Most of the common failures (unexpected reset
and program counter corruption) can be repro-
duced by manually forcing a low state on the RE-
SET pin or the Oscillator pins for 1 second.
To complete these trials, ESD stress can be ap-
plied directly on the device, over the range of
specification values. When unexpected behavior
is detected, the software can be hardened to pre-
vent unrecoverable errors occurring (see applica-
tion note AN1015).
0.1 MHz to 30 MHz
30 MHz to 130 MHz
130 MHz to 1 GHz
SAE EMI Level
Frequency Band
Monitored
V
conforms to IEC 1000-4-2
V
conforms to IEC 1000-4-4
DD
DD
= 5V, T
= 5V, T
Conditions
A
A
= 25°C, f
= 25°C, f
8/4 MHz 16/8 MHz
Max vs [f
15
17
12
OSC
OSC
ST7L15, ST7L19
3
OSC
= 8 MHz,
= 8 MHz,
/f
20
21
15
CPU
]
111/138
Level/
Class
dBµV
Unit
2B
3B
-