HYB18M1G160BF-6 QIMONDA [Qimonda AG], HYB18M1G160BF-6 Datasheet - Page 60

• Manufacturer Part Number: HYB18M1G160BF-6
• Description: 1-Gbit x16 DDR Mobile-RAM
• Manufacturer: QIMONDA [Qimonda AG]

1) The On-Chip Temperature Sensor (OCTS) adjusts the refresh rate in self refresh mode to the component’s actual temperature with a much
3.4
Figure 42
/condition. Temperature (Tcase): Minimum = 0 °C / -25°C, Maximum = 70°C; VDDQ: Minimum = 1.70 V, Maximum = 1.90 V
Rev.1.0, 2007-03
10242006-Y557-TZXW
Parameter & Test Conditions
Self Refresh Current:
Self refresh mode,
full array activation
(PASR = 000)
Self Refresh Current:
Self refresh mode,
half array activation
(PASR = 001)
Self Refresh Current:
Self refresh mode,
quarter array activation
(PASR = 010)
-25.0
-50.0
-75.0
75.0
50.0
25.0
0.0
finer resolution than supported by the 4 distinct temperature levels as defined by JEDEC for TCSR. At production test the sensor is
calibrated, and IDD6 max. current is measured at 85°C. Typ. values are obtained from device characterization.
0.0
shows the characteristics of full and half drive strength. It is specified under best and worst process variation
Full Drive Strength IV Curves
0.5
Pull-up and Pull-down Characteristics
1.0
85 °C
70 °C
45 °C
25 °C
85 °C
70 °C
45 °C
25 °C
85 °C
70 °C
45 °C
25 °C
Temperature
Max.
1.5
PD Min
PD Max
PU Min
PU Max
I
Symbol
DD6
60
1520
1020
640
560
1080
740
480
420
840
580
420
340
-10.0
-20.0
-30.0
30.0
20.0
10.0
HYE18M1G160BF
0.0
Typ.
0.0
Full Drive Strength and Half Drive Strength
1800
—
—
—
1560
—
—
—
1340
—
—
—
Max.
Half Drive Strength IV Curves
0.5
Values
—
1020
640
560
—
740
480
420
—
580
420
340
HYB18M1G160BF
Typ.
1.0
HY[B/E]18M1G16[0/1]BF
1-Gbit DDR Mobile-RAM
Self Refresh Currents
—
1800
—
—
1560
—
—
—
1340
—
—
Max.
FIGURE 42
1.5
TABLE 27
µA
Data Sheet
Units Note
PD Min
PD Max
PU Min
PU Max
1)