HYB18M1G160BF-6 QIMONDA [Qimonda AG], HYB18M1G160BF-6 Datasheet - Page 35

• Manufacturer Part Number: HYB18M1G160BF-6
• Description: 1-Gbit x16 DDR Mobile-RAM
• Manufacturer: QIMONDA [Qimonda AG]

An example of non-consecutive WRITEs is shown in
Rev.1.0, 2007-03
10242006-Y557-TZXW
Command
Address
DI b (n) = Data In to column b (column n)
3 subsequent elements of Data In are applied in the programmed order following DI b.
3 subsequent elements of Data In are applied in the programmed order following DI n.
Non-interrupted bursts of 4 are shown.
Each WRITE command may be to any active bank
DQS
DQS
DQ
DM
DQ
DM
CK
CK
BA,Col b
WRITE
t
DQSSmin
t
DQSSmax
Di b
NOP
Di b
Figure
BA,Col n
WRITE
26.
35
Di n
NOP
WRITE to WRITE (min. and max. t
Di n
NOP
HY[B/E]18M1G16[0/1]BF
1-Gbit DDR Mobile-RAM
FIGURE 25
= Don't Care
NOP
Data Sheet
DQSS
)