HYB18M1G160BF-6 QIMONDA [Qimonda AG], HYB18M1G160BF-6 Datasheet - Page 58

• Manufacturer Part Number: HYB18M1G160BF-6
• Description: 1-Gbit x16 DDR Mobile-RAM
• Manufacturer: QIMONDA [Qimonda AG]

3.3
Rev.1.0, 2007-03
10242006-Y557-TZXW
Parameter & Test Conditions
Operating one bank active-precharge current:
t
commands; address inputs are SWITCHING; data bus inputs are
STABLE
Precharge power-down standby current:
all banks idle, CKE is LOW; CS is HIGH,
control inputs are SWITCHING; data bus inputs are STABLE
Precharge power-down standby current with clock stop:
all banks idle, CKE is LOW; CS is HIGH, CK = LOW, CK = HIGH;
address and control inputs are SWITCHING; data bus inputs are
STABLE
Precharge non power-down standby current:
all banks idle, CKE is HIGH; CS is HIGH,
control inputs are SWITCHING; data bus inputs are STABLE
Precharge non power-down standby current with clock stop:
all banks idle, CKE is HIGH, CS is HIGH, CK = LOW, CK = HIGH;
address and control inputs are SWITCHING; data bus inputs are
STABLE
RC
=
t
RCmin
;
t
CK
=
t
CKmin
Operating Currents
; CKE is HIGH; CS is HIGH between valid
-0.5
-1.0
-1.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
t
1
t
CK
CK
Max. Amplitude = 0.9V
=
=
t
t
CKmin
CKmin
2
; address and
; address and
3
58
time (ns)
4
Max. Area = 3V-ns
Undershoot
Symbol
I
I
I
I
I
Overshoot
DD0
DD2P
DD2PS
DD2N
DD2NS
AC Overshoot and Undershoot Definition
5
95/90/75
1.40
1.20
36
3.0
6
Values
- 6
Maximum Operating Currents
7
VDD
VSS
HY[B/E]18M1G16[0/1]BF
75/65/55
1.40
1.20
30
3.0
1-Gbit DDR Mobile-RAM
Values
- 7.5
FIGURE 41
TABLE 26
mA
mA
mA
mA
mA
Unit Note
Data Sheet
3)4)
5)
1)2)