HYB18M1G160BF-6 QIMONDA [Qimonda AG], HYB18M1G160BF-6 Datasheet - Page 53

• Manufacturer Part Number: HYB18M1G160BF-6
• Description: 1-Gbit x16 DDR Mobile-RAM
• Manufacturer: QIMONDA [Qimonda AG]

1) These values are not subject to production test but verified by device characterization.
2) Input capacitance is measured according to JEP147 procedure for measuring capacitance using a vector network analyzer. VDD, VDDQ
3) Although DM is an input-only ball, it’s input capacitance models the input capacitance of the DQ and DQS balls.
Rev.1.0, 2007-03
10242006-Y557-TZXW
Parameter
Input capacitance: CK, CK
Input capacitance: all other input-only balls
Input/output capacitance: DQ, DQS, DM
are applied and all other balls (except the ball under test) are floating. DQ’s should be in high impedance state. This may be achieved by
pulling CKE to low level.
C
C
C
Symbol
I1
I2
IO
53
4.0
2.0
7.0
min.
Values
6.5
6.5
10
max.
HY[B/E]18M1G16[0/1]BF
1-Gbit DDR Mobile-RAM
Pin Capacitances
Unit
pF
pF
pF
TABLE 21
Data Sheet
Note
1)2)3)