HYB18M1G160BF-6 QIMONDA [Qimonda AG], HYB18M1G160BF-6 Datasheet - Page 38

• Manufacturer Part Number: HYB18M1G160BF-6
• Description: 1-Gbit x16 DDR Mobile-RAM
• Manufacturer: QIMONDA [Qimonda AG]

Rev.1.0, 2007-03
10242006-Y557-TZXW
Command
Address
DI b = Data In to column b. DO n = Data Out from column n.
An interrupted burst of 4 is shown, 2 data elements are written.
3 subsequent elements of Data In are applied in the programmed order following DI b.
t
A10 is LOW with the WRITE command (Auto Precharge is disabled)
The READ and WRITE commands are to the same device but not necessarily to the same bank.
WTR
DQS
DQ
DM
is referenced from the positive clock edge after the last Data In pair.
CK
CK
BA,Col b
WRITE
t
DQSSmax
NOP
Di b
NOP
t
WTR
38
BA,Col n
READ
Interrupting WRITE to READ (max. t
NOP
CL=3
HY[B/E]18M1G16[0/1]BF
NOP
1-Gbit DDR Mobile-RAM
FIGURE 29
= Don't Care
DO n
Data Sheet
NOP
DQSS
)