NAND04GA3C2A STMICROELECTRONICS [STMicroelectronics], NAND04GA3C2A Datasheet - Page 7

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NAND04GA3C2A

Manufacturer Part Number
NAND04GA3C2A
Description
4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
NAND04GA3C2A, NAND04GW3C2A
1
Table 2.
NAND04Gx3C2A
Reference
NAND04GW3C2A
Summary description
The NAND04GA3C2A and NAND04GW3C2A are a Multi-level Cell(MLC) devices from the
NAND Flash 2112 Byte Page family of non-volatile Flash memories. The devices are offered
in 1.8V and 3V V
2112 Bytes (2048 + 64 spare).
The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8
Input/Output bus. This interface reduces the pin count and makes it possible to migrate to
other densities without changing the footprint.
Each block can be programmed and erased over 10,000 cycles. The devices also have
hardware security features; a Write Protect pin is available to give hardware protection
against Program and Erase operations.
The devices feature an open-drain Ready/Busy output that can be used to identify if the
Program/Erase/Read (P/E/R) Controller is currently active. The use of an open-drain output
allows the Ready/Busy pins from several memories to be connected to a single pull-up
resistor.
Each device has a Cache Read feature which improves the read throughput for large files.
During Cache Reading, the device loads the data in a Cache Register while the previous
data is transferred to the I/O Buffers to be read.
All devices have the Chip Enable Don’t Care feature, which allows code to be directly
downloaded by a microcontroller, as Chip Enable transitions during the latency time do not
stop the read operation
There is the option of a Unique Identifier (serial number), which allows each device to be
uniquely identified. It is subject to an NDA (Non Disclosure Agreement) and is therefore not
described in the datasheet. For more details of this option contact your nearest ST Sales
office.
The NAND04GA3C2A and NAND04GW3C2A are available in a TSOP48 (12 x 20mm)
package. In order to meet environmental requirements, ST offers the devices in ECOPACK
packages. ECOPACK packages are Lead-free. The category of second Level Interconnect
is marked on the package and on the inner box label, in compliance with JEDEC Standard
JESD97. The maximum ratings related to soldering conditions are also marked on the inner
box label. ECOPACK is an ST trademark. ECOPACK specifications are available at:
www.st.com.
For information on how to order these options refer to
Scheme. Devices are shipped from the factory with Block 0 always valid and the memory
content bits, in valid blocks, erased to ’1’.
See
Product Description
NAND04GA3C2A
Part Number
Table 2: Product
Density
4Gbits
DDQ
Width
Bus
x8
Description, for all the devices available in the family.
I/O power supplies. The core voltage is 3V V
2048+
Bytes
Page
Size
64
256K+
Block
Bytes
Size
8K
Memory
Pages x
Blocks
Array
2048
128
2.7 to 3.6V
2.7 to 3.6V
Operating
Voltage
V
DD
Operating
Voltage
2.7V to
1.7V to
1.95V
V
3.6V
DDQ
Table 22: Ordering Information
Random
Access
(max)
60µs
Sequential
Access
DD.
1 Summary description
(min)
60ns
Timings
The size of a Page is
Program
800µs
Page
(typ)
Block
Erase
1.5ms
(typ)
Package
TSOP48
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