NAND04GA3C2A STMICROELECTRONICS [STMicroelectronics], NAND04GA3C2A Datasheet - Page 38

• Manufacturer Part Number: NAND04GA3C2A
• Description: 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

12 DC and AC parameters
Table 20.
1. AC Characteristics for V
2. ES = Electronic Signature.
3. WP High to W High during Program/Erase Enable operations.
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t
Symbol
t
t
t
t
VHWH
VLWH
t
t
t
t
t
t
ALLRL1
ALLRL2
WHBH1
t
t
t
t
t
t
t
t
t
t
BLBH1
BLBH2
BLBH3
BLBH4
t
CLLRL
WHBH
WHBL
WHRL
EHQZ
RHRL
RHQZ
RLRH
RLQV
BHRL
DZRL
ELQV
RLRL
(3)
(3)
Symbol
t
t
AC Characteristics for Operations, V
t
PROG
BERS
t
t
t
t
t
t
t
Alt.
t
WHR
t
REH
t
t
t
RST
CLR
CHZ
CEA
RHZ
t
REA
t
WB
WW
AR
RR
RP
RC
t
IR
R
Address Latch Low to
Write Enable High to
Read Enable High to
Write Enable High to
DDQ
Read Enable Low to
Read Enable Low to
Read Enable Low to
Ready/Busy Low to
Read Enable High
Read Enable Low
Read Enable Low
Read Enable Low
Ready/Busy High
Ready/Busy High
Ready/Busy High
Output Valid
1.8V devices are still to be determined.
Command Latch Low to Read Enable Low
Write Enable High to Read Enable Low
Ready/Busy High to Read Enable Low
Write Enable High to Ready/Busy Low
Read Enable High to Output Hi-Z
Chip Enable High to Output Hi-Z
Chip Enable Low to Output Valid
Data Hi-Z to Read Enable Low
Write Protection time
Reset Busy time, during program
Parameter
Reset Busy time, during ready
Reset Busy time, during erase
Reset Busy time, during read
Read Enable High Hold time
Read Electronic Signature
Read Enable Pulse Width
Read Enable Access time
Read ES Access time
DDQ
Program Busy time
Erase Busy time
Read Cycle time
Read Busy time
Read Busy time
3V Devices
Read cycle
NAND04GA3C2A, NAND04GW3C2A
(1)
(2)
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
3V I/O
2000
200
100
100
100
20
20
20
60
20
40
15
30
50
20
30
40
60
45
60
80
3
5
0
Unit
ms
ns
ns
ns
µs
µs
µs
µs
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns