NAND04GA3C2A STMICROELECTRONICS [STMicroelectronics], NAND04GA3C2A Datasheet - Page 37

• Manufacturer Part Number: NAND04GA3C2A
• Description: 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

NAND04GA3C2A, NAND04GW3C2A
Table 19.
1. AC Characteristics for V
Symbol
t
t
t
t
t
t
t
t
t
t
CLHWH
t
WHCLH
t
t
ALHWH
t
WHALH
WHCLL
t
ALLWH
CLLWH
WHALL
WHDX
WHEH
WHWL
WLWH
DVWH
WLWL
ELWH
Alt. Symbol
AC Characteristics for Command, Address, Data Input, V
t
t
t
t
t
t
t
t
t
t
t
CLH
ALS
CLS
ALH
WH
WP
WC
DS
CS
DH
CH
DDQ
Address Latch Low to Write Enable High
Address Latch High to Write Enable High
Command Latch High to Write Enable High
Command Latch Low to Write Enable High
Data Valid to Write Enable High
Chip Enable Low to Write Enable High
Write Enable High to Address Latch High
Write Enable High to Address Latch Low
Write Enable High to Command Latch High
Write Enable High to Command Latch Low
Write Enable High to Data Transition
Write Enable High to Chip Enable High
Write Enable High to Write Enable Low
Write Enable Low to Write Enable High
Write Enable Low to Write Enable Low
1.8V devices are still to be determined.
Parameter
AL Setup time
CL Setup time
Data Setup time
E Setup time
AL Hold time
CL hold time
Data Hold time
E Hold time
W High Hold
time
W Pulse Width
Write Cycle time
DDQ
12 DC and AC parameters
3V Devices
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
(1)
3V I/O
40
20
20
30
15
10
15
10
20
40
60
37/51
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns