NAND04GA3C2A STMICROELECTRONICS [STMicroelectronics], NAND04GA3C2A Datasheet - Page 34

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NAND04GA3C2A

Manufacturer Part Number
NAND04GA3C2A
Description
4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
11 Maximum rating
11
Table 15.
1. Minimum Voltage may undershoot to –2V for less than 20ns during transitions on input and I/O pins. Maximum voltage may
34/51
overshoot to V
Symbol
V
T
T
V
BIAS
IO
STG
DD
(1)
Maximum rating
Stressing the device above the ratings listed in
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.
Absolute Maximum Ratings
DD
+ 2V for less than 20ns during transitions on I/O pins.
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Supply Voltage
Parameter
1.8V, V
3 V, V
DDQ
DDQ
devices
devices
Table 15: Absolute Maximum
NAND04GA3C2A, NAND04GW3C2A
– 0.6
– 0.6
– 0.6
– 50
– 65
Min
Value
Max
125
150
2.7
4.6
4.6
Ratings, may
Unit
°C
°C
V
V
V

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