MT42C4256C-10/883C AUSTIN [Austin Semiconductor], MT42C4256C-10/883C Datasheet - Page 27

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MT42C4256C-10/883C

Manufacturer Part Number
MT42C4256C-10/883C
Description
256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM
Manufacturer
AUSTIN [Austin Semiconductor]
Datasheet

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Part Number:
MT42C4256C-10/883C
Manufacturer:
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Quantity:
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NOTES:
1. Access time is t
2. Output can go from the high-impedance state to an invalid data state prior to the specified access time.
NOTE A: A write cycle or a read-modify-write cycle can be mixed with the read cycles as long as the write and read-modify-write timing specifications
are not violated and the proper polarity of DSF is selected on the falling edges of RAS\ and CAS\ to select the desired write mode (normal,
block write, etc.)
SMJ44C251B/MT42C4256
Rev. 0.1 12/03
FIGURE 17: Enhanced-Page-Mode Read-Cycle Timing
a(CP)
or t
Austin Semiconductor, Inc.
a(CA)
dependent.
27
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
SMJ44C251B
MT42C4256
VRAM
VRAM
VRAM
VRAM
VRAM

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