MT42C4256C-10/883C AUSTIN [Austin Semiconductor], MT42C4256C-10/883C Datasheet - Page 20

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MT42C4256C-10/883C

Manufacturer Part Number
MT42C4256C-10/883C
Description
256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM
Manufacturer
AUSTIN [Austin Semiconductor]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT42C4256C-10/883C
Manufacturer:
MT
Quantity:
10
SMJ44C251B/MT42C4256
Rev. 0.1 12/03
TIMING REQUIREMENTS (continued)
Setup time, SDQ before SC high
Hold time, column address after CAS\ low
Hold time, DSF after CAS\ low
Hold time, row address after RAS\ low
Hold time, TRG\ after RAS\ low
Hold time, SE\ after RAS\ low with
TRG\ = W\ = low
Hold time, write mask, transfer enable
after RAS\ low
Hold time, DQ after RAS\ low
(write-mask operation)
Hold time, DSF after RAS\ low
Hold time, column address after RAS\ low
Hold time, data after CAS\ low
Hold time, data after RAS\ low
Hold time, data after W\ low
Hold time, read after CAS\ high
Hold time, read after RAS\ high
Hold time, write after CAS\ low
Hold time, write after RAS\ low
Hold time, TRG\ after W\ low
Hold time, SDQ after SC high
Hold time, SDQ after SC high
Hold time, DSF after RAS\ low
Hold time, serial-write disable
Delay time, RAS\ low to CAS\ high
Delay time, CAS\ high to RAS\ low
Delay time, CAS\ low to RAS\ high
Delay time, CAS\ low to W\ low
Delay time, RAS\ low to CAS\ low
Delay time, column address to RAS\ high
Delay time, RAS\ low to W\ low
Delay time, column address to W\ low
Delay time, RAS\ low to CAS\ high
Delay time, CAS\ low to RAS\ low
Delay time, RAS\ high to CAS\ low
Delay time, CAS\ low to TRG\ high for DRAM read
cycles
Austin Semiconductor, Inc.
6
PARAMETER
9
7
7
8
8
10,11
10
12
13
13
13
10
7
SYM/ALT. SYM
t
t
t
t
t
t
t
d(RLCH)RF
t
d(CLRL)RF
d(RHCL)RF
t
t
t
t
t
t
t
t
t
t
d(CAWL)
t
t
t
h(SCSE)
d(CLWL)
d(RLWL)
t
h(SHSQ)
h(CLCA)
h(RWM)
t
t
d(CARH)
su(SDS)
t
t
t
h(CLW)
h(RLW)
t
d(RLCH)
d(CHRL)
d(CLRH)
d(RLCL)
t
t
t
h(CHrd)
h(RHrd)
h(WLG)
h(RLCA)
t
t
h(RLD)
h(SDS)
h(SFC)
h(TRG)
h(SFR)
h(RSF)
h(RA)
h(RDQ)
h(WLD)
h(SE)
h(CLD)
t
d(CLGH)
20
/t
/t
/t
/t
/t
/t
/t
/t
/t
/t
/t
/t
/t
/t
/t
/t
/t
/t
/t
/t
/t
/t
/t
/t
/t
/t
/t
RAH
REH
/t
/t
/t
DHR
WCH
WCR
CFH
RWH
RFH
SDH
FHR
SWIH
TLH
RCH
RRH
OEH
/t
/t
CWD
RCD
RWD
/t
SDS
CAH
MH
DH
SOH
CSH
CRP
RSH
AWD
DH
RAL
AR
CHR
CSR
RPC
1
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
MIN
100
130
20
20
15
15
15
15
15
15
45
20
45
20
10
30
50
25
45
20
25
55
25
50
85
25
10
10
25
0
0
5
5
0
-10
MAX
75
MIN
120
155
100
20
20
15
15
15
15
15
15
45
25
50
25
10
35
55
30
45
20
30
65
25
60
25
10
10
30
0
0
5
5
0
-12
SMJ44C251B
MAX
MT42C4256
90
VRAM
VRAM
UNIT
VRAM
VRAM
VRAM
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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