MT42C4256C-10/883C AUSTIN [Austin Semiconductor], MT42C4256C-10/883C Datasheet - Page 18

• Manufacturer Part Number: MT42C4256C-10/883C
• Description: 256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM
• Manufacturer: AUSTIN [Austin Semiconductor]

CAPACITANCE OVER RECOMMENDED RANGES OF SUPPLY
SWITCHING CHARACTERISTICS OVER RECOMMENDED RANGES
OF SUPPLY VOLTAGES AND OPERATING FREE-AIR TEMPERA-
TURE
NOTES:
1. Capacitance is sampled only at initial design and after any major change. Samples are tested at 0 V and 25°C with a 1-MHz signal applied to the
terminal under test. All other terminals are open.
2. Switching times assume C
3. t
4. For conditions shown as MIN/ MAX, use the appropriate value specified in the timing requirements.
SMJ44C251B/MT42C4256
Rev. 0.1 12/03
VOLTAGES AND OPERATING FREE-AIR TEMPERATURE, f = 1MHz
Access time from CAS\
Access time from column address
Access time from CAS\ high
Access time from RAS\
Access time of DQ0 - DQ3 from TRG\ low
Access time of SDQ0 - SDQ3 from SC high
Access time of SDQ0 - SDQ3 from SE\ low
Disable time, random output from CAS\ high
Disable time, random output from TRG\ high
Disable time, random output from SE\ high
Input capacitance, A0 - A8
Input capacitance, CAS\ and RAS\
Output capacitance, SDQs and DQs
Output capacitance, SQSF
dis(CH)
, t
dis(G)
2
, and t
PARAMETER
PARAMETER
dis(SE)
Austin Semiconductor, Inc.
are specified when the output is no longer driven.
L
= 100 pF unless otherwise noted (see Figure 12).
3
3
3
C
SYM/ALT. SYM
C
C
SYM
C
o(QSF)
i(RC)
t
t
o(O)
t
t
t
i(A)
t
t
dis(CH)
dis(SE)
t
a(CA)
t
t
a(SQ)
dis(G)
a(CP)
a(SE)
a(C)
a(R)
a(G)
/t
/t
/t
/t
/t
/t
/t
/t
CAC
RAC
/t
OEA
/t
CAA
CPA
SCA
SEA
OEZ
SEZ
OFF
18
MIN
CONDITIONS
t
t
t
t
d(RLCL)
d(RLCL)
d(RLCL)
d(RLCL)
C
C
C
C
C
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
L
L
L
L
L
= 100pF
= 100pF
= 30pF
= 30pF
= 30pF
MAX
7
7
9
9
= MAX
= MAX
= MAX
= MAX
4
UNIT
pF
pF
pF
pF
MIN
0
0
0
-10
MAX
100
25
50
55
25
30
20
20
20
20
SMJ44C251B
MT42C4256
MIN
0
0
0
VRAM
VRAM
-12
VRAM
VRAM
VRAM
MAX
120
30
60
65
30
35
25
20
20
20
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1