p4c164-12cwmlf Pyramid Semiconductor Corporation, p4c164-12cwmlf Datasheet
p4c164-12cwmlf
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p4c164-12cwmlf Summary of contents
Page 1
... Access times as fast as 8 nanoseconds are available, permitting greatly enhanced system operating speeds. The P4C164 is available in 28-pin 300 mil DIP and SOJ, 28- pin 600 mil plastic and ceramic DIP, 28-pin 350 x 550 mil LCC, 32-pin 450 x 550 mil LCC, and 28-pin CERPACK. ...
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... Value Temperature Under –55 to +125 Bias Storage Temperature –65 to +150 Power Dissipation 1.0 DC Output Current 50 (4) = 25° 1.0MHz A Parameter Conditions Typ Input Capacitance Output Capacitance OUT P4C164 P4C164L Min Max Min Max 2.2 V +0.5 2 (3) (3) –0.5 0.8 –0.5 0.8 V –0.2 V +0.5 V –0 ...
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... POWER DISSIPATION CHARACTERISTICS VS. SPEED Symbol Parameter I Dynamic Operating Current 5.5V. Tested with outputs open Max. Switching inputs are 0V and 3V DATA RETENTION CHARACTERISTICS (P4C164L, Military Temperature Only) Symbol Parameter V V for Data Retention Data Retention Current CCDR t Chip Deselect to CDR Data Retention Time † ...
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... P4C164 AC ELECTRICAL CHARACTERISTICS—READ CYCLE ( ± 10%, All Temperature Ranges -10 Symbol Parameter Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max Read Cycle Time Address Access Time ...
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... CE causes them -25 -35 -45 -70 -100 100 Page P4C164 Unit ...
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... P4C164 TIMING WAVEFORM OF WRITE CYCLE NO. 1 (WE TIMING WAVEFORM OF WRITE CYCLE NO. 2 (CE Notes: 11. CE and WE must be LOW, and CE HIGH for WRITE cycle 12 LOW for this WRITE cycle to show t 13 goes LOW, simultaneously with WE HIGH, goes HIGH the output remains in a high impedance state. ...
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... Figure 1. Output Load * including scope and test fixture. Note: Because of the high speed of the P4C164/L, care must be taken when testing this device; an inadequate setup can cause a normal functioning part to be rejected as faulty. Long high-inductance leads that cause supply bounce must be avoided by bringing the V directly up to the contactor fingers. A 0.01 µ ...
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... P4C164 ORDERING INFORMATION SELECTION GUIDE The P4C164 is available in the following temperature, speed and package options. The P4C164L is available only over the military temperature range ture Pa cka ge Ra nge 8 Commercial Plastic DIP (300 mil) -8PC Plastic DIP (600 mil) N/A Plastic SOJ ...
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... Page P4C164 100 -100CM -100DM -100FM -100LM ...
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... P4C164 SIDE BRAZED DUAL IN-LINE PACKAGE (300 mils) C5 Pkg # # Pins 28 (300 mil) Symbol Min Max A - 0.225 b 0.014 0.026 b2 0.045 0.065 C 0.008 0.018 D - 1.485 E 0.240 0.310 eA 0.300 BSC e 0.100 BSC L 0.125 0.200 Q 0.015 0.070 S1 0.005 - S2 0.005 - SIDE BRAZED DUAL IN-LINE PACKAGE (600 mils) ...
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... CERDIP DUAL IN-LINE PACKAGE Pkg # D5-2 # Pins 28 (300 mil) Symbol Min Max A - 0.225 b 0.014 0.026 b2 0.045 0.065 C 0.008 0.018 D - 1.485 E 0.240 0.310 eA 0.300 BSC e 0.100 BSC L 0.125 0.200 Q 0.015 0.060 S1 0.005 - 0° 15° Document # SRAM115 REV F P4C164 Page ...
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... P4C164 CERPACK CERAMIC FLAT PACKAGE F4 Pkg # # Pins 28 Symbol Min Max A 0.060 0.090 b 0.015 0.022 c 0.004 0.009 D - 0.730 E 0.330 0.380 e 0.050 BSC k 0.005 0.018 L 0.250 0.370 Q 0.026 0.045 S - 0.085 S1 0.005 - SOJ SMALL OUTLINE IC PACKAGE Pkg # J5 # Pins 28 (300 mil) Symbol Min Max A 0.120 ...
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... Max A 0.060 0.075 A1 0.050 0.065 B1 0.022 0.028 D 0.442 0.458 D1 0.300 BSC D2 0.150 BSC D3 - 0.458 E 0.540 0.560 E1 0.400 BSC E2 0.200 BSC E3 - 0.558 e 0.050 BSC h 0.040 REF j 0.020 REF L 0.045 0.055 L1 0.045 0.055 L2 0.075 0.095 Document # SRAM115 REV F P4C164 Page ...
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... P4C164 PLASTIC DUAL IN-LINE PACKAGE (300 mils) P5 Pkg # # Pins 28 (300 mil) Symbol Min Max A - 0.210 0.014 0.023 b2 0.045 0.070 C 0.008 0.014 D 1.345 1.400 E1 0.270 0.300 E 0.300 0.380 e 0.100 BSC eB - 0.430 L 0.115 0.150 0° 15° PLASTIC DUAL IN-LINE PACKAGE (600 mils) ...
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... SOIC/SOP SMALL OUTLINE IC PACKAGE (SN) S6 Pkg # # Pins 28 (300 mil) Symbol Min Max A 0.090 0.110 A1 0.003 0.010 B 0.012 0.020 C 0.004 0.012 D 0.700 0.716 e 0.050 BSC E 0.290 0.300 H 0.465 0.485 L 0.016 0.050 0° 9° Document # SRAM115 REV F P4C164 Page ...
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... P4C164 REVISIONS DOCUMENT NUMBER: SRAM115 DOCUMENT TITLE: P4C164 ULTRA HIGH SPEED STATIC CMOS RAMS ORIG. OF ISSUE REV. DATE CHANGE OR 1997 DAB A Oct-05 JDB B Jun-06 JDB C Aug-06 JDB D Aug-06 JDB E Aug-06 JDB F Jun-07 JDB Document # SRAM115 REV F DESCRIPTION OF CHANGE New Data Sheet ...