s71jl064ha0bfw62 Advanced Micro Devices, s71jl064ha0bfw62 Datasheet - Page 88

• Manufacturer Part Number: s71jl064ha0bfw62
• Description: Stacked Multi-chip Product Mcp Flash Memory And Psram Cmos 3.0volt-only, Simultaneous Operation Flash Memories And Static Ram/pseudo-static Ram
• Manufacturer: Advanced Micro Devices

Erase And Programming Performance
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V V
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program
6. The device has a minimum cycling endurance of 100,000 cycles per sector.
7. Contact the local sales office for minimum cycling endurance values in specific applications and operating conditions.
Latchup Characteristics
Note: Includes all pins except V
88
Parameter
Sector Erase Time
Chip Erase Time
Word Program Time
Accelerated Byte/Word Program Time
Accelerated Chip Programming Time
Byte Program Time
Chip Program Time
(Note 3)
Input voltage with respect to V
(including OE# and RESET#)
Input voltage with respect to V
V
CC
data pattern.
bytes program faster than the maximum program times listed.
command. See
Current
Table 11
Description
for further information on command definitions.
SS
SS
Word Mode
Byte Mode
CC
on all pins except I/O pins
on all I/O pins
. Test conditions: V
CC
= 2.7 V, 1,000,000 cycles.
Typ (Note 1)
CC
S29JL064H
0.4
56
10
42
28
7
4
5
P r e l i m i n a r y
= 3.0 V, one pin at a time.
Max (Note 2)
210
120
150
126
30
84
5
–100 mA
–1.0 V
–1.0 V
Min
Unit
sec
sec
sec
sec
µs
µs
µs
CC
, 100,000 cycles; checkerboard
Excludes 00h programming
S71JLxxxHxx_00A1 February 25, 2004
prior to erasure (Note 4)
Excludes system level
overhead (Note 5)
V
Comments
+100 mA
CC
12.5 V
Max
+ 1.0 V