s71jl064ha0bfw62 Advanced Micro Devices, s71jl064ha0bfw62 Datasheet - Page 136
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s71jl064ha0bfw62
Manufacturer Part Number
s71jl064ha0bfw62
Description
Stacked Multi-chip Product Mcp Flash Memory And Psram Cmos 3.0volt-only, Simultaneous Operation Flash Memories And Static Ram/pseudo-static Ram
Manufacturer
Advanced Micro Devices
Datasheet
1.S71JL064HA0BFW62.pdf
(141 pages)
- Current page: 136 of 141
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124
Average operating current
Standby Current (CMOS)
Output leakage current
Input leakage current
Output high voltage
Output low voltage
DC and Operating Characteristics
Item
Symbol
I
I
V
I
V
I
I
CC1
CC2
SB1
LO
OH
OL
LI
CE1#≥V
Cycle time=1µs, 100% duty, I
CE1#=V
Cycle time=Min, I
CS2≥V
CE1#=V
CS2≤0.2V(CS2 controlled), BYTE3=V
CC
CC
IL
-0.2V, CS2≥V
-0.2V, BYTE#=V
8 Mb SRAM (supplier 1)
IH
, CS2=V
, CS2=V
V
IN
Other input =0~V
=V
V
V
Test Conditions
P r e l i m i n a r y
I
V
IN
IO
IH
I
OH
IO
OL
IN
IL
IL
, BYTE#=V
=V
=V
=0mA, 100% duty,
≥V
or V
= -1.0mA
CC
= 2.1mA
or OE#=V
SS
SS
CC
-0.2V (CE1# controlled) or
-0.2V
IH
to V
to V
SS
or V
IO
CC
CC
=0mA, CE1#≤0.2V,
SS
IH
CC
CC
or V
or WE#=V
, V
IN
CC
SS
≤0.2V or
,
or V
CC
IL
70ns
,
,
Min
2.4
-1
-1
-
-
-
-
S71JLxxxHxx_00A1 February 25, 2004
Typ
-
-
-
-
-
-
-
Max
0.4
22
15
1
1
3
Unit
mA
mA
mA
mA
mA
V
V
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