s71jl064ha0bfw62 Advanced Micro Devices, s71jl064ha0bfw62 Datasheet - Page 102

• Manufacturer Part Number: s71jl064ha0bfw62
• Description: Stacked Multi-chip Product Mcp Flash Memory And Psram Cmos 3.0volt-only, Simultaneous Operation Flash Memories And Static Ram/pseudo-static Ram
• Manufacturer: Advanced Micro Devices

16 Mb pSRAM (supplier 2)
16 Megabit (1Mb x 16bit) Ultra-low Power
Asynchronous CMOS Pseudo SRAM
Features
General Description
February 25, 2004 S71JLxxxHxx_00A1
The S71JL064HA0-10/11/12 contains an integrated memory device containing a
low-power, 16 Mbit SRAM built using a self-refresh DRAM array organized as
1,024,576 words by 16 bits. It is designed to be identical in operation and inter-
face to standard 6T SRAMS. The device is designed for low standby and operating
current and includes a power-down feature to automatically enter standby mode.
The device operates with two chip enable (CE1# and CE2) controls and output
enable (OE#) to allow for easy memory expansion. Byte controls (UB# and LB#)
allow the upper and lower bytes to be accessed independently and can also be
used to deselect the device. The S71JL064HA0 is optimal for various applications
where low-power is critical, such as battery backup and hand-held devices. The
device can operate over a very wide temperature range of -40°C to +85°C and
is available in tested wafer format.
Single Wide Power Supply Range
— 2.7 to 3.6 Volts
Very low standby current
— 100µA at 3.0V (Max)
Simple memory control
— Dual Chip Enables (CE1# and CE2)
— Byte control for independent byte operation
— Output Enable (OE#) for memory expansion
Very fast access time
— 55ns address access option
— 35ns OE# access time
Automatic power down to standby mode
TTL compatible three-state output driver
Operating Temperature
— -40°C to +85°C
Speed
— 70ns
— 55 ns
P r e l i m i n a r y
16 Mb pSRAM (supplier 2)
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