s71jl064ha0bfw62 Advanced Micro Devices, s71jl064ha0bfw62 Datasheet - Page 84
![no-image](/images/manufacturer_photos/0/0/14/advanced_micro_devices_sml.jpg)
s71jl064ha0bfw62
Manufacturer Part Number
s71jl064ha0bfw62
Description
Stacked Multi-chip Product Mcp Flash Memory And Psram Cmos 3.0volt-only, Simultaneous Operation Flash Memories And Static Ram/pseudo-static Ram
Manufacturer
Advanced Micro Devices
Datasheet
1.S71JL064HA0BFW62.pdf
(141 pages)
- Current page: 84 of 141
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Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE#
to toggle DQ2 and DQ6.
Note: Not 100% tested.
84
WE#
JEDEC
DQ6
DQ2
Parameter
Temporary Sector Unprotect
Embedded
Erasing
RESET#
RY/BY#
Enter
t
t
t
t
VIDR
Std
VHH
RRB
RSP
WE#
CE#
Description
V
RESET# Setup Time for Temporary Sector
Unprotect
RESET# Hold Time from RY/BY# High for
Temporary Sector Unprotect
V
HH
ID
V
V
or V
Erase
ID
SS
Rise and Fall Time (see Note)
Rise and Fall Time (see Note)
, V
IH
Figure 25. Temporary Sector Unprotect Timing Diagram
Suspend
IL
Erase
,
t
VIDR
Erase Suspend
Read
t
RSP
Suspend Program
Figure 24. DQ2 vs. DQ6
Enter Erase
Program or Erase Command Sequence
S29JL064H
P r e l i m i n a r y
Suspend
Program
Erase
Min
Min
Min
Min
Erase Suspend
Read
All Speed Options
t
Resume
RRB
Erase
t
500
250
VIDR
4
4
Erase
S71JLxxxHxx_00A1 February 25, 2004
V
SS
or V
, V
V
IL
ID
IH
,
Complete
Erase
Unit
ns
ns
µs
µs
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