s71jl064ha0bfw62 Advanced Micro Devices, s71jl064ha0bfw62 Datasheet - Page 126

• Manufacturer Part Number: s71jl064ha0bfw62
• Description: Stacked Multi-chip Product Mcp Flash Memory And Psram Cmos 3.0volt-only, Simultaneous Operation Flash Memories And Static Ram/pseudo-static Ram
• Manufacturer: Advanced Micro Devices

Operation Mode
Note: L = Low-level Input (V
Absolute Maxumum Ratings
Note: (Stresses greater than listed under "Absolute Maximum Ratings" may cause permanent damage to the device
DC Characteristics
Note: V
114
Deep Power-down Standby
SYMBOL
Write (Lower Byte)
Write (Upper Byte)
Read (Lower Byte)
Read (Upper Byte)
Outputs Disabled
IL
V
V
V
Write (Word)
Read (Word)
DD
(Min) -1.0 V with 10 ns pulse width; VIH(Max) VDD+1.0 V with 10 ns pulse width
IH
IL
SYMBOL
Standby
MODE
V
T
I
T
V
V
strg.
OUT
P
OUT
opr.
DD
IN
D
Table 26. DC Recommended Operating Conditions (T
Power Supply Voltage
Input High Voltage
Input Low Voltage
IL
Short Circuit Output Current
), H = High-level Input (V
PARAMETER
CE1#
Operating Temperature
H
H
L
L
L
L
L
L
L
Power Supply Voltage
Storage Temperature
Power Dissipation
Output Voltage
Input Voltage
CE2
H
H
H
H
H
H
H
H
RATING
L
OE#
64 Mb pSRAM (supplier 3)
X
X
X
H
X
X
L
L
L
WE#
H
H
H
H
X
X
L
L
L
P r e l i m i n a r y
IH
-0.3 (Note
), X = V
LB#
H
H
X
X
X
L
L
L
L
MIN
2.6
2.0
UB#
IH
H
H
L
L
L
L
X
X
X
-1.0 to 3.6
-1.0 to 3.6
-1.0 to 3.6
-55 to 150
or V
-25 to 85
VALUE
0.6
Add
50
IL
X
X
X
X
X
X
X
X
X
, High-Z = High impedance
2.75
TYP.
-
-
A
I/O1 to I/O8
= -25°C to 85°C)
High-Z
Invalid
High-Z
High-Z
High-Z
D
D
D
D
OUT
OUT
IN
IN
V
DD
(Note)
MAX
S71JLxxxHxx_00A1 February 25, 2004
3.3
0.4
I/O9 to I/O16
+ 0.3
High-Z
Invalid
High-Z
High-Z
High-Z
D
D
D
D
OUT
OUT
IN
IN
UNIT
mA
°C
°C
W
V
V
V
UNIT
POWER
V
I
I
I
I
I
I
I
I
I
DDSD
DDO
DDO
DDO
DDO
DDO
DDO
DDO
DDS