s71jl064ha0bfw62 Advanced Micro Devices, s71jl064ha0bfw62 Datasheet - Page 110
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s71jl064ha0bfw62
Manufacturer Part Number
s71jl064ha0bfw62
Description
Stacked Multi-chip Product Mcp Flash Memory And Psram Cmos 3.0volt-only, Simultaneous Operation Flash Memories And Static Ram/pseudo-static Ram
Manufacturer
Advanced Micro Devices
Datasheet
1.S71JL064HA0BFW62.pdf
(141 pages)
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AC Characteristics
98
Cycle
SYMBOL
I
I
I
I
V
V
I
SBD
I
CC1
CC2
SB1
LO
OH
Table 18. AC Characteristics and Operating Conditions (T
IL
OL
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
CO1
CO2
t
OHZ
BHZ
OLZ
BLZ
OH
RC
AA
OE
BA
HZ
LZ
Operating Current @ Max Cycle Time
Operating Current @ Min Cycle Time
Table 17. DC Characteristics (T
Standby Current (CMOS)
Output Leakage Current
Input Leakage Current
Output High Voltage
Output Low Voltage
Deep Power-down
PARAMETER
Data Byte Control High to Output in High-Z
Data Byte Control Low to Output in Low-Z
Output Enable High to Output in High-Z
Output Enable Low to Output in Low-Z
Chip Enable High to Output in High-Z
Chip Enable Low to Output in Low-Z
Chip Enable (CE#1) Access Time
Chip Enable (CE2) Access Time
Data Byte Control Access Time
Output Enable Access Time
Output Data Hold Time
Address Access Time
Read Cycle Time
Parameter
16 Mb pSRAM (supplier 4)
P r e l i m i n a r y
A
I
= -25°C to 85°C, VDD = 2.6 to 3.3V)
CE2 ≤ 0.2V, Other inputs = V
IO
Cycle time = Min., 100% duty,
= 0mA, CE1# = V
CE1# = V
CE2 ≥ V
Other inputs = V
Cycle time = 1µs, 100% duty
OE# = V
CE1# = V
I
IO
TEST CONDITION
CE2 = V
V
V
or V
= 0mA, CE1# ≤ 0.2V,
V
IO
IN
I
IN
I
OH
DD
OL
IN
= V
= V
A
= V
IH
IH
≥ V
= -1.0mA
= 2.1mA
= -25°C to 85°C, V
-0.2V, V
DD –
, CE2 = V
or WE# = V
SS
SS
DD –
IH
DD
to V
to V
or V
0.2V and
-0.2V
IL
0.2V,
SS
IN
, CE2 = V
DD
DD
IL
~ V
≤ 0.2V
SS
Min
IL
70
10
10
10
5
-
-
-
-
-
-
-
-
CC
or
IL
~ V
CC
IH
70
,
S71JLxxxHxx_00A1 February 25, 2004
DD
MIN
= 2.6 to 3.3V)
2.4
-1
-1
Max
-
-
-
-
70
70
70
35
70
25
25
25
-
-
-
-
-
MAX UNIT
100
0.4
35
10
1
1
5
-
Unit
mA
mA
µA
µA
µA
µA
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
V
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