mc68hc912bd32 Freescale Semiconductor, Inc, mc68hc912bd32 Datasheet - Page 80

• Manufacturer Part Number: mc68hc912bd32
• Description: 16-bit Device Composed Of Standard On-chip Peripherals
• Manufacturer: Freescale Semiconductor, Inc

Erasing the Flash EEPROM
Flash EEPROM
MC68HC912BD32 Rev 1.0
The following sequence demonstrates the recommended procedure for
erasing the Flash EEPROM. The V
level prior to executing step 4 the first time.
The flowchart in
sequence.
10. If all of the Flash EEPROM locations are erased, repeat the same
11. Read the entire array to ensure that the Flash EEPROM is erased.
12. Clear LAT.
13. Turn off V
1. Turn on V
2. Set the LAT bit and ERAS bit to configure the Flash EEPROM for
3. Write to any valid address in the Flash array. This allows the erase
4. Apply erase voltage by setting ENPE.
5. Delay for a single erase pulse (t
6. Remove erase voltage by clearing ENPE.
7. Delay while high voltage is turning off (t
8. Read the entire array to ensure that the Flash EEPROM is erased.
9. If all of the Flash EEPROM locations are not erased, repeat steps
Freescale Semiconductor, Inc.
For More Information On This Product,
erasing.
voltage to be turned on; the data written and the address written
are not important. The boot block will be erased only if the control
bit BOOTP is negated.
4 through 7 until either the remaining locations are erased, or until
the maximum erase pulses have been applied (n
number of pulses as required to erase the array. This provides
100% erase margin.
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FP
FP
Figure 8
Flash EEPROM
(apply program/erase voltage to the V
(reduce voltage on V
demonstrates the recommended erase
FP
pin voltage must be at the proper
EPULSE
FP
pin to V
).
VERASE
DD
).
).
EP
FP
)
pin).
12-flash