mt48lc16m16a2tg-7e-it Micron Semiconductor Products, mt48lc16m16a2tg-7e-it Datasheet - Page 7
mt48lc16m16a2tg-7e-it
Manufacturer Part Number
mt48lc16m16a2tg-7e-it
Description
256mb X4, X8, X16 Sdram
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT48LC16M16A2TG-7E-IT.pdf
(77 pages)
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Figure 1:
PDF: 09005aef8091e6d1/Source: 09005aef8091e6a8
256MSDRAM_2.fm - Rev. L 10/07 EN
BA0, BA1
A0–A12,
RAS#
CAS#
WE#
CKE
CLK
CS#
15
ADDRESS
REGISTER
64 Meg x 4 SDRAM Functional Block Diagram
MODE REGISTER
CONTROL
LOGIC
12
SDRAMs offer substantial advances in DRAM operating performance, including the
ability to synchronously burst data at a high data rate with automatic column-address
generation, the ability to interleave between internal banks to hide precharge time, and
the capability to randomly change column addresses on each clock cycle during a burst
access.
COUNTER
REFRESH
13
11
2
13
ADDRESS
2
ROW-
MUX
COUNTER/
COLUMN-
CONTROL
ADDRESS
LATCH
LOGIC
BANK
13
DECODER
ADDRESS
BANK0
LATCH
ROW-
&
11
7
8,192
READ DATA LATCH
DQM MASK LOGIC
SENSE AMPLIFIERS
(8,192 x 2,048 x 4)
WRITE DRIVERS
I/O GATING
DECODER
COLUMN
MEMORY
Micron Technology, Inc., reserves the right to change products or specifications without notice.
BANK0
ARRAY
8,192
2,048
(x4)
BANK1
BANK2
BANK3
256Mb: x4, x8, x16 SDRAM
4
4
1
General Description
©1999 Micron Technology, Inc. All rights reserved.
REGISTER
REGISTER
OUTPUT
INPUT
DATA
DATA
1
4
DQM
DQ0-
DQ3
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