LM3S328-IRN20-A0T Luminary Micro, Inc., LM3S328-IRN20-A0T Datasheet - Page 354

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LM3S328-IRN20-A0T

Manufacturer Part Number
LM3S328-IRN20-A0T
Description
Microcontroller
Manufacturer
Luminary Micro, Inc.
Datasheet
Electrical Characteristics
18.1.5
18.2
18.2.1
18.2.2
354
Flash Memory Characteristics
Table 18-5. Flash Memory Characteristics
a. A program/erase cycle is defined as switching the bits from 1-> 0 -> 1.
AC Characteristics
Load Conditions
Unless otherwise specified, the following conditions are true for all timing measurements. Timing
measurements are for 4-mA drive strength.
Figure 18-1. Load Conditions
Clocks
Table 18-6. Phase Locked Loop (PLL) Characteristics
a. The exact value is determined by the crystal value programmed into the XTAL field of the Run-Mode Clock
b. PLL frequency is automatically calculated by the hardware based on the XTAL field of the RCC register.
f
f
f
T
REF_CRYSTAL
REF_EXT
PLL
READY
Parameter
Configuration (RCC) register (see page 82).
T
PE
T
T
ERASE
T
PROG
Parameter
RET
ME
CYC
Parameter Name
Number of guaranteed program/erase
cycles
Data retention at average operating
temperature of 85°C
Word program time
Page erase time
Mass erase time
a
before failure
Parameter Name
Crystal reference
External clock reference
PLL frequency
PLL lock time
pin
Preliminary
b
a
a
GND
3.579545
3.579545
C
Min
L
-
-
= 50 pF
10,000
Min
200
10
20
20
Nom
200
-
-
-
Nom
-
-
-
-
-
8.192
8.192
Max
0.5
-
Max
-
-
-
-
-
April 27, 2007
cycles
years
MHz
MHz
MHz
Unit
Unit
ms
ms
ms
µs

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