BF1100WR NXP Semiconductors, BF1100WR Datasheet - Page 8

• Manufacturer Part Number: BF1100WR
• Description: Dual-gate Mos-fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
1995 Apr 25
handbook, halfpage
handbook, halfpage
Dual-gate MOS-FET
Fig.14 Gate 1 current as a function of gate 2 voltage;
V
R
V
R
DS
DS
G1
(mA)
G1
( A)
I G1
I D
Fig.16 Drain current as a function of the gate 2
= 9 V.
= 180 k (connected to V
= 9 V.
= 180 k (connected to V
50
40
30
20
10
16
12
0
8
4
0
0
0
typical values.
voltage; typical values; see Fig.26.
2
2
GG
GG
); T
); T
j
j
= 25 C.
= 25 C.
4
4
V
V
V
V
GG
GG
G2 S
G2 S
= 9 V
= 9 V
7 V
8 V
6 V
5 V
4 V
8 V
7 V
6 V
5 V
4 V
MLD167
MLD169
(V)
(V)
6
6
8
handbook, halfpage
handbook, halfpage
Fig.15 Gate 1 current as a function of gate 2 voltage;
V
R
V
R
DS
(mA)
DS
G1
G1
( A)
I G1
I D
Fig.17 Drain current as a function of the gate 2
= 12 V.
= 250 k (connected to V
= 12 V.
= 250 k (connected to V
50
40
30
20
10
16
12
0
0
8
4
0
0
typical values.
voltage; typical values; see Fig.26.
2
2
GG
GG
); T
); T
j
j
= 25 C.
= 25 C.
4
4
Product specification
V
V
BF1100WR
V
GG
V
GG
G2 S
G2 S
= 12 V
= 12 V
11 V
10 V
10 V
11 V
9 V
MLD168
9 V
8 V
7 V
8 V
7 V
MLD170
(V)
(V)
6
6