BF1100WR NXP Semiconductors, BF1100WR Datasheet - Page 5

• Manufacturer Part Number: BF1100WR
• Description: Dual-gate Mos-fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
DYNAMIC CHARACTERISTICS
Common source; T
1995 Apr 25
C
C
C
C
F
reduction
SYMBOL
y
handbook, halfpage
Dual-gate MOS-FET
ig1-s
ig2-s
os
rs
f = 50 MHz.
T
fs
gain
(dB)
j
= 25 C.
Fig.4
10
20
30
40
50
0
0
Gain reduction as a function of the AGC
voltage; typical values.
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
drain-source capacitance
reverse transfer capacitance f = 1 MHz
noise figure
amb
1
PARAMETER
= 25 C; V
2
G2-S
= 4 V; I
3
V
AGC
MLD157
pulsed; T
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 800 MHz; G
D
(V)
= 10 mA; unless otherwise specified.
V
V
V
V
V
V
V
V
V
V
V
V
4
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
= 9 V
= 12 V
= 9 V
= 12 V
= 9 V
= 12 V
= 9 V
= 12 V
= 9 V
= 12 V
= 9 V
= 12 V
j
= 25 C
CONDITIONS
5
S
= G
handbook, halfpage
(1) R
(2) R
f
w
Fig.5
(dB V)
Sopt
V unw
= 50 MHz; f
120
110
100
G
G
; B
90
80
= 250 k to V
= 180 k to V
0
S
Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.26.
= B
unw
Sopt
= 60 MHz; T
10
GG
GG
= 12 V.
= 9 V.
24
24
MIN.
20
amb
= 25 C.
28
28
2.2
2.2
1.6
1.4
1.4
1.1
25
25
2
2
TYP.
30
gain reduction (dB)
Product specification
BF1100WR
33
33
2.6
2.6
1.8
1.5
35
35
2.8
2.8
40
MAX.
(1)
(2)
MLD158
50
mS
mS
pF
pF
pF
pF
pF
pF
fF
fF
dB
dB
UNIT