BF1100WR NXP Semiconductors, BF1100WR Datasheet - Page 10

• Manufacturer Part Number: BF1100WR
• Description: Dual-gate Mos-fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
1995 Apr 25
handbook, halfpage
Dual-gate MOS-FET
V
I
V
I
D
D
Fig.24 Forward transfer admittance and phase as
(mS)
DS
DS
(mS)
y fs
= 10 mA; T
= 10 mA; T
y is
10
10
10
= 12 V; V
10
= 12 V; V
10
1
1
2
2
1
10
10
Fig.22 Input admittance as a function of
a function of frequency; typical values.
amb
amb
G2
G2
= 4 V.
= 4 V.
= 25 C.
= 25 C.
frequency; typical values.
10
10
2
2
b is
g is
y fs
fs
f (MHz)
f (MHz)
MLD187
MLD185
10
10
3
3
10
(deg)
10
1
2
fs
10
handbook, halfpage
V
I
V
I
D
D
Fig.23 Reverse transfer admittance and phase as
( S)
DS
DS
(mS)
y rs
= 10 mA; T
= 10 mA; T
y os
10
10
10
10
10
= 12 V; V
= 12 V; V
10
1
1
3
2
Fig.25 Output admittance as a function of
1
2
10
10
a function of frequency; typical values.
amb
amb
G2
G2
= 4 V.
= 4 V.
frequency; typical values.
= 25 C.
= 25 C.
10
10
2
2
y rs
b os
g os
rs
f (MHz)
f (MHz)
Product specification
BF1100WR
MLD186
MLD188
10
10
3
3
10
10
10
1
(deg)
3
rs
2