BF1100WR NXP Semiconductors, BF1100WR Datasheet - Page 12

• Manufacturer Part Number: BF1100WR
• Description: Dual-gate Mos-fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
Table 1 Scattering parameters: V
Table 2 Noise data: V
Table 3 Scattering parameters: V
Table 4 Noise data: V
1995 Apr 25
(MHz)
(MHz)
1000
1000
Dual-gate MOS-FET
100
200
300
400
500
600
700
800
900
100
200
300
400
500
600
700
800
900
f
f
50
50
(MHz)
(MHz)
MAGNITUDE
MAGNITUDE
800
800
f
f
(ratio)
(ratio)
0.985
0.981
0.975
0.965
0.947
0.927
0.913
0.890
0.869
0.845
0.823
0.985
0.980
0.973
0.962
0.946
0.929
0.912
0.895
0.868
0.845
0.823
s
s
11
11
DS
DS
= 9 V; V
= 12 V; V
ANGLE
ANGLE
(deg)
(deg)
14.4
21.6
28.3
34.9
41.7
47.9
54.0
59.7
65.4
14.6
21.5
28.5
35.0
41.6
47.8
53.8
59.8
65.7
3.9
7.3
3.7
7.4
G2-S
DS
DS
G2-S
(dB)
(dB)
F
2.00
F
2.00
= 9 V; V
MAGNITUDE
= 12 V; V
MAGNITUDE
min
min
= 4 V; I
= 4 V; I
(ratio)
(ratio)
2.618
2.602
2.577
2.555
2.513
2.449
2.339
2.361
2.302
2.228
2.167
2.576
2.563
2.541
2.519
2.479
2.419
2.373
2.336
2.284
2.213
2.160
G2-S
D
G2-S
D
= 10 mA
s
s
= 10 mA
21
21
= 4 V; I
= 4 V; I
ANGLE
ANGLE
175.1
170.5
160.7
151.6
141.8
133.4
124.6
106.4
175.3
170.9
161.6
152.9
143.5
135.5
127.2
101.6
(deg)
115.4
(deg)
118.7
110.0
97.6
89.6
94.1
D
12
D
(ratio)
(ratio)
= 10 mA
0.67
0.66
= 10 mA
MAGNITUDE
MAGNITUDE
(ratio)
(ratio)
0.001
0.001
0.002
0.002
0.003
0.003
0.003
0.003
0.003
0.003
0.003
0.000
0.001
0.002
0.002
0.003
0.003
0.003
0.003
0.003
0.003
0.003
opt
opt
s
s
12
12
(deg)
(deg)
43.9
43.3
ANGLE
ANGLE
137.9
104.8
129.3
125.0
(deg)
(deg)
112.2
111.2
80.4
74.0
79.3
80.5
82.8
78.9
80.6
93.9
83.0
85.2
79.4
78.2
80.0
83.4
91.3
95.9
MAGNITUDE
MAGNITUDE
(ratio)
(ratio)
1.000
0.999
0.995
0.994
0.992
0.988
0.984
0.982
0.979
0.976
0.974
1.000
1.000
0.997
0.996
0.995
0.991
0.989
0.987
0.985
0.983
0.981
Product specification
BF1100WR
0.89
0.97
s
s
r
r
22
22
n
n
ANGLE
ANGLE
(deg)
(deg)
15.0
18.5
22.0
25.3
28.8
32.1
35.5
12.4
15.3
18.1
20.9
23.7
26.5
29.3
11.3
1.9
4.0
7.6
1.6
3.3
6.4
9.3