BF1100WR NXP Semiconductors, BF1100WR Datasheet - Page 4

• Manufacturer Part Number: BF1100WR
• Description: Dual-gate Mos-fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board.
2. T
STATIC CHARACTERISTICS
T
Notes
1. R
2. R
1995 Apr 25
R
R
V
V
V
V
V
V
I
I
I
j
DSX
G1-SS
G2-SS
SYMBOL
SYMBOL
= 25 C; unless otherwise specified.
(BR)G1-SS
(BR)G2-SS
(F)S-G1
(F)S-G2
G1-S(th)
G2-S(th)
Dual-gate MOS-FET
th j-a
th j-s
s
G1
G1
is the temperature at the soldering point of the source lead.
connects gate 1 to V
connects gate 1 to V
gate 1-source breakdown voltage
gate 2-source breakdown voltage
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
gate 2-source threshold voltage
drain-source current
gate 1 cut-off current
gate 2 cut-off current
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
PARAMETER
GG
GG
= 9 V; see Fig.26.
= 12 V; see Fig.26.
PARAMETER
V
V
V
V
V
I
V
I
V
I
V
I
V
R
V
R
V
V
D
D
D
D
G2-S
G1-S
G2-S
G1-S
G2-S
G2-S
G1-S
G1-S
G2-S
G2-S
G2-S
G1-S
G1
G1
= 20 A
= 20 A
= 20 A
= 20 A
= 180 k ; note 1
= 250 k ; note 2
= V
= V
= V
= V
= 4 V; V
= 4 V; V
= 4 V; V
= 4 V; V
= 4 V; V
= 4 V; V
= V
= V
4
CONDITIONS
DS
DS
DS
DS
DS
DS
= 0; I
= 0; I
= 0; I
= 0; I
= 0; V
= 0; V
DS
DS
DS
DS
DS
DS
note 1
T
s
= 9 V;
= 12 V;
= 9 V;
= 12 V;
= 9 V;
= 12 V;
G1-S
G2-S
S-G1
S-G2
= 91 C; note 2
G1-S
G2-S
CONDITIONS
= 1 mA
= 1 mA
= 10 mA
= 10 mA
= 12 V
= 12 V
13.2
13.2
0.5
0.5
0.3
0.3
0.3
0.3
8
8
MIN.
VALUE
350
210
Product specification
20
20
1.5
1.5
1
1
1.2
1.2
13
13
50
50
BF1100WR
MAX.
V
V
V
V
V
V
V
V
mA
mA
nA
nA
UNIT
K/W
K/W
UNIT