BF1100WR NXP Semiconductors, BF1100WR Datasheet - Page 2

• Manufacturer Part Number: BF1100WR
• Description: Dual-gate Mos-fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Enhancement type field-effect transistor in a plastic
microminiature SOT343R package. The transistor
consists of an amplifier MOS-FET with source and
substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
QUICK REFERENCE DATA
1995 Apr 25
V
I
P
T
C
C
F
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
D
y
Specially designed for use at 9 to 12 V supply voltage
Short channel transistor with high forward transfer
admittance to input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz
Superior cross-modulation performance during AGC.
VHF and UHF applications such as television tuners and
professional communications equipment.
SYMBOL
j
DS
tot
Dual-gate MOS-FET
ig1-s
rs
fs
drain-source voltage
drain current
total power dissipation
operating junction temperature
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
CAUTION
PARAMETER
f = 1 MHz
f = 800 MHz
2
PINNING
CONDITIONS
handbook, halfpage
Marking code: MF.
PIN
Fig.1 Simplified outline (SOT343R) and symbol.
1
2
3
4
Top view
3
2
SYMBOL
1
s, b
g
g
4
d
24
2
1
MIN.
source
drain
gate 2
gate 1
MAM192
28
2.2
25
2
g
g
TYP.
2
1
DESCRIPTION
Product specification
BF1100WR
d
14
30
280
150
33
2.6
35
MAX.
s,b
V
mA
mW
mS
pF
fF
dB
C
UNIT