BF1100WR NXP Semiconductors, BF1100WR Datasheet
BF1100WR
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BF1100WR Summary of contents
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... DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 25 ...
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... Top view MAM192 Marking code: MF. Fig.1 Simplified outline (SOT343R) and symbol. CONDITIONS MIN MHz f = 800 MHz 2 Product specification BF1100WR DESCRIPTION s,b TYP. MAX. UNIT 280 mW 150 ...
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... Fig.2 Power derating curve. 1995 Apr 25 CONDITIONS see Fig. amb MLD180 Y fs (mS) 150 200 amb Fig.3 3 Product specification BF1100WR MIN. MAX note 1 280 65 +150 +150 100 Forward transfer admittance as a function of junction temperature ...
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... 13.2 G1 13.2 G2 0.5 S- 0 G2-S Product specification BF1100WR UNIT 350 K/W 210 K/W MAX. UNIT 1 1 ...
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... 180 MHz MHz unw amb Unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values; see Fig.26. Product specification BF1100WR MAX. UNIT 2 1 ...
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... Fig.7 Transfer characteristics; typical values (mS Fig.9 Forward transfer admittance as a function of drain current; typical values. Product specification BF1100WR MLD160 1.6 2 MLD162 3 2 ...
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... G2-S = 250 k (connected Fig.13 Drain current as a function of gate 1 voltage (= V ); typical values; see Fig.26. GG Product specification BF1100WR MLD164 147 k 180 k 205 k 249 k 301 k 402 k 511 (V) DS MLD166 (V) GG ...
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... typical values 250 k (connected voltage; typical values; see Fig.26. BF1100WR MLD168 = ( MLD170 = ...
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... mA amb Fig.21 Output admittance as a function of frequency; typical values. Product specification BF1100WR MLD182 (deg (MHz) MLD184 (MHz) ...
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... mA amb Fig.25 Output admittance as a function of frequency; typical values. Product specification BF1100WR MLD186 (deg (MHz) MLD188 (MHz) ...
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... R GEN For 180 For 250 1995 Apr 25 V AGC 4 DUT 4 Fig.26 Cross-modulation test circuit. 11 Product specification BF1100WR 450 nH C4 4.7 nF MGC420 V DS ...
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... G2 min (dB) (ratio) 2.00 0.66 12 Product specification BF1100WR s 12 ANGLE MAGNITUDE (ratio) (deg) (ratio) 0.001 137.9 1.000 0.001 80.4 0.999 0.002 74.0 0.995 0.002 79.3 0.994 0.003 80.5 0.992 0.003 82.8 0.988 ...
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... Philips Semiconductors Dual-gate MOS-FET PACKAGE OUTLINE 0 Dimensions in mm. 1995 Apr 25 0 2.2 2 0.7 0.5 1.4 1.2 2.2 1.8 Fig.27 SOT343R. 13 Product specification 1.00 max 0.1 max 0.2 A 1.35 1.15 0.3 0.1 0.25 0.10 B MSB367 BF1100WR ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Apr 25 14 Product specification BF1100WR ...